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參數(shù)資料
| 型號(hào)： | AS8201 |
| 廠商： | AUSTRIAMICROSYSTEMS AG |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | TTP/C-C1 Communications Controller |
| 中文描述： | 2 CHANNEL(S), 2M bps, SERIAL COMM CONTROLLER, PQFP120 |
| 封裝： | PLASTIC, QFP-120 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 247K |
| 代理商： | AS8201 |
TTP/C-C1 Communications Controller Data Sheet
AS8201
Rev. NC, October 1999
Page 5 of 13
Austria Mikro Systeme International AG
63-79
80
81
82
83
84
ROM_ADDRESS[0:16]
ROM_RESETB
ROM_CEB
ROM_OEB
ROM_WEB
ROM_READY
O
O
O
O
O
I
PU
ROM address bus, range = 2^17 = 128k
ROM reset line, active low
ROM chip enable, active low
ROM output enable, active low
ROM write enable, active low; “read” if high.
ROM ready, signals read operation ready, leave open when un-
used
positive power supply
negative power supply
I/O ROM data bus (lower byte)
P
positive power supply
P
negative power supply
I/O ROM data bus (higher byte)
85
86
87-94
95
96
97-
104
105
106
107-
117
118
119
120
VDD
VSS
ROM_DATA[0:7]
VDD
VSS
ROM_DATA[8:15]
P
P
VDD
VSS
RAM_ADDRESS[0:10]
P
P
I
positive power supply
negative power supply
DPRAM address bus, range = 2^11 = 2048
RAM_CEB
VDD
VSS
Input CMOS
Input CMOS with pull up
Input CMOS with pull down
Output CMOS
Input/Output CMOS tristate
Power Pin
Analog Pin
I
P
P
DPRAM chip enable, active low
positive power supply
negative power supply
I
I
PU
I
PD
O
I/O
P
A
Electrical Specifications
Absolute Maximum Ratings (Non Operating)
SYMBOL PARAMETER
VDD
V
in
Input Voltage on any Pin
I
in
Input Current on any Pin
T
strg
Storage Temperature
T
sold
Soldering Temperature
t
sold
Soldering Time
H
Humidity
ESD
Electrostatic Discharge
1)
300 oC all ceramic packages and DIL plastic packages, 260 oC for surface mounting plastic packages
MIN
-0.3 V
- 0.3 V
-100 mA
-55 oC
MAX
7.0 V
VDD + 0.3 V
100 mA
150 oC
260 oC
10 sec
85 %
NOTE
DC Supply Voltage
25°C
1)
Reflow and Wave
5 %
1000 V
HBM: R = 1.5 k
, C = 100 pF
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may effect device reliability (e.g. hot carrier degradation).
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