參數(shù)資料
型號(hào): AS6C1008-55PCN
廠商: ALLIANCE MEMORY INC
元件分類: SRAM
英文描述: IC,AS6C1008-55PCN,DIP-32 LP SRAM,55NS,128K X 8,2.7-5.5V
中文描述: 128K X 8 STANDARD SRAM, 55 ns, PDIP32
封裝: 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-32
文件頁數(shù): 11/14頁
文件大?。?/td> 2717K
代理商: AS6C1008-55PCN
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
tWR
tAS
(4)
TOW
CE#
tAW
Address
tWC
CE2
WRITE CYCLE 2 (CE# and CE2 Controlled) (1,2,5,6)
Dout
Din
Data Valid
tDW
tDH
(4)
High-Z
tWHZ
WE#
tWP
tCW
CE#
tWR
tAS
tAW
Address
tWC
CE2
Notes :
1.WE#, CE# must be high or CE2 must be low during all address transitions.
2.A write occurs during the overlap of a low CE#, high CE2, low WE#.
3.During a WE#controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and data to be
placed on the bus.
4.During this period, I/O pins are in the output state, and input signals must not be applied.
5.If the CE#low transition and CE2 high transition occurs simultaneously with or after WE# low transition, the outputs remain in a high
impedance state.
6.tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
February 2007
128K X 8 BIT LOW POWER CMOS SRAM
AS6C1008
02/February/07, v 1.0
Alliance Memory Inc.
Page 6 of 14
相關(guān)PDF資料
PDF描述
AS6C4008-55PCN IC,AS6C4008-55PCN,DIP-32 LP SRAM,55NS,512K X 8,2.7-5.5V
AS6C4008-55SIN IC,AS6C4008-55SIN,SOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V
AS6C4008-55STIN IC,AS6C4008-55STIN,STSOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V
AS6C4008-55TIN IC,AS6C4008-55TIN,TSOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V
AS6C6264-55PCN IC,AS6C6264-55PCN,DIP-28 LP SRAM,55NS,8K X 8,2.7-5.5V
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AS6C1008-55PIN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS6C1008-55SIN 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS6C1008-55SINL 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS6C1008-55SINLTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
AS6C1008-55SINTR 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mb, 2.7V-5.5V, 55ns 128K x 8 Asynch 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray