參數(shù)資料
型號: AS4LC8M8S0-75TC
廠商: ALLIANCE SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
封裝: 0.400 INCH, PLASTIC, TSOP2-54
文件頁數(shù): 7/24頁
文件大小: 566K
代理商: AS4LC8M8S0-75TC
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
7
I
DD
specifications and conditions
1,2,3
(0
°
C
T
A
70
°
C, V
DD
, V
DDQ
= +3.3V ± 0.3V)
Notes
1
2
3
4
5
I
DD
specifications are tested after proper initialization of the device.
I
DD
is dependent on output loading and clock cycle time. Values are specified with minimum cycle time and outputs open.
I
DD
tests have V
IL
= 0V and V
IH
= 3V.
I
DD
current will decrease at lower CAS latencies. This is because the lower the latency, the lower the clock cycle time.
Address transitions average one transition every two clock cycles.
Parameter
Symbol
Max
–8
Units
Notes
–75
–10F/10
Operating current: active mode; burst = 2; READ or WRITE;
t
RC
= t
RC
(min); CAS latency = 3
Standby current: power-down mode; all banks idle;
CKE = low
Standby current: active mode; CKE = high; CS# = high; all
banks active after t
RCD
met; no accesses in progress
Operating current: burst mode; continuous burst; READ or
WRITE; all banks active; CAS latency = 3
I
DD1
115
95
95
mA
4, 5
I
DD2
2
2
2
mA
4,5
I
DD3
45
35
35
mA
4, 5
I
DD4
140
130
120
mA
4,5
Auto refresh current: CKE = high;
CS# = high
t
RFC
= t
RFC
(min);
CL = 3
t
RFC
= 15.625ms;
CL = 3
I
DD5
210
210
190
mA
4, 5
I
DD6
50
50
40
mA
4,5
Self-refresh current: CKE
0.2V
I
DD7
1
1
1
mA
4,5
相關PDF資料
PDF描述
AS4LC8M8S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M4E0 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM(擴展數(shù)據(jù)總線)系列)
AS4LC4M4E1 4M × 4 CMOS DRAM (EDO) Family(4M × 4 CMOS動態(tài)RAM(擴展數(shù)據(jù)總線)系列)
AS5020 6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE
AS5020T 6-BIT MAGNETIC ANGULAR POSITION ENCODER WITH SERIAL INTERFACE
相關代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC8M8S0-8TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4PD 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Current Density Standard Avalanche Surface Mount Rectifiers
AS-4PD 制造商:RALTRON 制造商全稱:RALTRON 功能描述:SURFACE MOUNT MICROPROCESSOR CRYSTAL
AS4PDHM3/86A 功能描述:整流器 4A 200V RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
AS4PDHM3/87A 功能描述:DIODE STD 4A 200V SMPC RoHS:是 類別:分離式半導體產(chǎn)品 >> 單二極管/整流器 系列:eSMP™ 標準包裝:100 系列:- 二極管類型:標準 電壓 - (Vr)(最大):50V 電流 - 平均整流 (Io):6A 電壓 - 在 If 時為正向 (Vf)(最大):1.4V @ 6A 速度:快速恢復 = 200mA(Io) 反向恢復時間(trr):300ns 電流 - 在 Vr 時反向漏電:15µA @ 50V 電容@ Vr, F:- 安裝類型:底座,接線柱安裝 封裝/外殼:DO-203AA,DO-4,接線柱 供應商設備封裝:DO-203AA 包裝:散裝 其它名稱:*1N3879