參數(shù)資料
型號(hào): AS4LC4M16S0
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動(dòng)態(tài)RAM)
中文描述: 3.3分× 16的CMOS同步DRAM(3.3分× 16的CMOS同步動(dòng)態(tài)RAM)的
文件頁數(shù): 6/24頁
文件大?。?/td> 566K
代理商: AS4LC4M16S0
6
ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC4M16S0
AS4LC16M4S0
Recommended operating conditions
V
IL
min = –1.5V for pulse widths less than 5 ns.
I
OH
= –2mA, and I
OL
= 2mA.
Recommended operating conditions apply throughout this document unless otherwise specified.
Absolute maximum ratings
Note: Stresses greater than those listed under
AbsouteMaximumRatings
may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions outside those indicated in the operational sections of this specificati on is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Capacitance
Notes
1
2
3
4
5
This parameter is sampled. V
CC
= V
CCQ
= 3.3V; f = 1MHz; T
A
= 23
°
C; pin under test biased at 1.4V.
Max value is specified for –10, –10F, and –8.
For –75 part, Max = 3.5 pF.
For –75 part, Max = 3.8 pF.
For –75 part, Max = 6.0 pF.
Parameter
Symbol
V
CC
,V
CCQ
GND
V
IH
V
IL
V
OH
V
OL
Min
3.0
0.0
2.0
–0.3
2.4
Max
3.6
0.0
Unit
V
V
V
V
V
V
Supply voltage
Input voltage
V
CC
+ 0.3
0.8
0.4
Output voltage
Input leakage current
Any input 0V
V
IN
V
CC
Output leakage current
DQs are disabled
0V
V
OUT
V
CCQ
Ambient operating temperature
I
L
–5
+5
uA
I
OZ
–5
+5
uA
T
A
0
70
°C
Parameter
Symbol
V
IN
,V
OUT
V
CC
,V
CCQ
T
STG
P
D
I
OUT
Min
–1.0
–1.0
–55
Max
+4.6
+4.6
+150
1
50
Unit
V
V
°
C
W
mA
Input voltage
Power supply voltage
Storage temperature (plastic)
Power dissipation
Short circuit output current
Parameter
Symbol
C
i1
Min
2.5
Max
4
Unit
pF
Notes
1, 2, 3
Input capacitance: CLK
Input capacitance: All other input-only
pins
Input/output capacitance
C
i2
2.5
5
pF
1, 2, 4
C
I/O
4.0
6.5
pF
1, 2, 5
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