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參數(shù)資料
| 型號： | AS4LC4M16S0 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動態(tài)RAM) |
| 中文描述： | 3.3分× 16的CMOS同步DRAM（3.3分× 16的CMOS同步動態(tài)RAM）的 |
| 文件頁數(shù)： | 14/24頁 |
| 文件大?。?/td> | 566K |
| 代理商： | AS4LC4M16S0 |
14
ALLIANCE SEMICONDUCTOR
7/5/00
AS4LC4M16S0
AS4LC16M4S0
(D) WR-P Interrupted by WR in another bank (CL = 3, BL = 4)
*
The row active command of the precharged bank can be issued after t
RP
from this point.
Clock suspension read waveforms
CLK external
(BL = 8)
CLK
CMD
(A)
DQ
D
A0
D
A1
D
A2
D
B0
DB
1
(B)
D
B2
D
B3
Bank A Precharge Starts *
CLK internal
CKE
DQM
DQ
Q
1
Q
2
Q
3
Q
4
Q
6
OPEN
OPEN
CLK external
CLK internal
CKE
DQM
DQ
Q
1
Q
2
Q
3
Q
4
Q
6
OPEN
CLK external
CLK internal
CKE
DQM
DQ
Q
1
Q
2
Q
3
Q
4
Q
6
Q
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0 | 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動態(tài)RAM) |
| AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M16S0-10FTC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-10TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-75TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M4 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V |
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