參數(shù)資料
型號: AS4LC4M16S0
廠商: Alliance Semiconductor Corporation
英文描述: 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動態(tài)RAM)
中文描述: 3.3分× 16的CMOS同步DRAM(3.3分× 16的CMOS同步動態(tài)RAM)的
文件頁數(shù): 13/24頁
文件大?。?/td> 566K
代理商: AS4LC4M16S0
AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
13
Concurrent Auto-P Waveforms
According to Intel ’s specification, auto-p burst interruption is allowed by another burst provided that the interrupting burst
is in a different bank than the ongoing burst.
(A) RD-P interrupted by RD in another bank (CL = 3, BL = 4)
(B) RD-P interrupted by WR in another bank (CL = 2, BL = 8)
(C) WR-P interrupted by RD in another bank (CL = 2, BL = 4)
* The row active command of the precharge bank can be issued after t
RP
from this point.
CLK
CMD
(A)
DQ
A
0
A
1
B
0
B
1
B
2
B
3
Bank A Precharge Starts *
RD
(B)
CLK
CMD
(A)
DQ
Q
A0
Q
A1
D
N(B0)
D
(B1)
D
(B2)
Bank A Precharge Starts *
(B)
DQM
D
(B7)
CLK
CMD
WRP
(A)
DQ
D
(A0)
D
(A1)
Q
B0
Q
B1
Q
B2
Bank A Precharge Starts *
RD
(B)
Q
B3
相關(guān)PDF資料
PDF描述
AS4LC4M16S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC8M8S0 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動態(tài)RAM)
AS4LC4M16S0-10FTC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-10TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AS4LC4M16S0-10FTC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-10TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-75TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M16S0-8TC 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
AS4LC4M4 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V