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參數(shù)資料
| 型號(hào)： | AS4LC4M16S0 |
| 廠商： | Alliance Semiconductor Corporation |
| 英文描述： | 3.3V 4M × 16 CMOS Synchronous DRAM(3.3V 4M × 16 CMOS同步動(dòng)態(tài)RAM) |
| 中文描述： | 3.3分× 16的CMOS同步DRAM（3.3分× 16的CMOS同步動(dòng)態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 17/24頁(yè) |
| 文件大?。?/td> | 566K |
| 代理商： | AS4LC4M16S0 |
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AS4LC8M8S0
AS4LC4M16S0
7/5/00
ALLIANCE SEMICONDUCTOR
17
write cycle
Precharge command
A Precharge command can be used to interrupt burst read/write operation during the read cycle. During RD, burst read is
terminated and o/p goes to High Z after CAS latency. The same bank can be activated after t
RP
. During write, burst write
operation is terminated immediately. Data written two cycles prior to the precharge command will be correctly stored. Set
DQM high one cycle before Precharge command and hold it high until Precharge command to mask and avoid writing invalid
data.
read cycle (CL = 2)
read cycle (CL = 3)
write cycle (BL = 8)
CLK
CMD
DQ
Burst stop
Write data
(CL = 2,3)
Q
0
Q
1
Q
2
Q
3
CLK
CMD
DQ
Read data
PRE
ACT
Q
0
Q
1
Q
2
Q
3
t
RP
CLK
CMD
DQ
Read data
PRE
ACT
Q0
Q1
Q2
Q3
CLK
CMD
DQ
Write data
PRE
ACT
D
0
D
1
D
2
Q
4
t
RP
D
3
Masked
DQM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AS4LC4M16S0-75TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC8M8S0 | 3.3V 8M × 8 CMOS Synchronous DRAM(3.3V 8M × 8 CMOS同步動(dòng)態(tài)RAM) |
| AS4LC4M16S0-10FTC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-10TC | 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AS4LC4M16S0-10FTC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-10TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-75TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M16S0-8TC | 制造商:ALSC 制造商全稱:Alliance Semiconductor Corporation 功能描述:3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM |
| AS4LC4M4 | 制造商:AUSTIN 制造商全稱:Austin Semiconductor 功能描述:4M x 4 CMOS DRAM WITH FAST PAGE MODE, 3.3V |
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