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參數(shù)資料
| 型號： | AON4703 |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強(qiáng)模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 169K |
| 代理商： | AON4703 |
AON4703
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
Min
Typ
Max
Units
BV
DSS
-20
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1
nA
V
A
-0.3
-15
-0.63
73
110
99
133
7
-0.83
90
135
120
160
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
4
S
V
A
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
540
72
49
12
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
6.1
0.6
1.6
10
12
44
22
21
7.5
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.39
0.5
0.1
V
20
C
T
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 0. June 2006
34
5.2
0.8
pF
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
I
F
=-3.4A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.4A
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.9
,
R
GEN
=3
m
V
GS
=-2.5V, I
D
=-2.5A
V
GS
=-1.8V, I
D
=-1.5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.4A
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
I
DSS
μ
A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.4A
V
DS
=-16V, V
GS
=0V
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=-3.4A, dI/dt=100A/
μ
s
I
D
=-250
μ
A, V
GS
=0V
I
F
=0.5A
V
R
=16V
V
R
=16V, T
J
=125°C
V
R
=10V
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
I
rm
Maximum reverse leakage current
mA
Junction Capacitance
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
Alpha & Omega Semiconductor, Ltd.
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