- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375339 > AON4703 (ALPHA) P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | AON4703 |
| 廠商： | ALPHA |
| 英文描述： | P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | P通道增強模式場的肖特基二極管晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 169K |
| 代理商： | AON4703 |
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
130
50
Maximum Junction-to-Lead
C
Steady-State
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
66
95
80
°C/W
75
110
35
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
88
28
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
51
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
1.1
0.62
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.7
0.96
A
1.2
Pulsed Forward Current
B
7
Schottky reverse voltage
20
1.9
Continuous Forward Current
A
I
F
A
-2.7
Pulsed Drain Current
B
-15
Gate-Source Voltage
±8
-3.4
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
-20
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90m
(V
GS
= -4.5V)
R
DS(ON)
< 120m
(V
GS
= -2.5V)
R
DS(ON)
< 160m
(V
GS
= -1.8V)
SCHOTTKY
V
KA
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AON4703 uses advanced trench technology to provide
excellent R
DS(ON)
and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AON4703 is Pb-free (meets ROHS &
Sony 259 specifications). AON4703L is a Green Product
ordering option. AON4703 and AON4703L are electrically
identical.
DFN3X2-8L
A
K
G
D
S
G
S
A
A
D
D
K
K
1
2
3
4
8
7
6
5
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AON4803 | Dual P-Channel Enhancement Mode Field Effect Transistor |
| AON5800 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AON5802 | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AOP600 | Complementary Enhancement Mode Field Effect Transistor |
| AOP600L | Complementary Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AON4703_10 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET with Schottky Diode |
| AON4705L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AON4803 | 功能描述:MOSFET 2P-CH 20V 3.4A DFN3X2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AON4803_12 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V Dual P-Channel MOSFET |
| AON4805L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual P-Channel Enhancement Mode Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。