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參數(shù)資料
| 型號(hào)： | AON5800 |
| 廠商： | ALPHA |
| 英文描述： | Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 常見(jiàn)的漏雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | AON5800 |
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
Typ
30
61
4.5
Max
40
75
6
R
θ
JC
Maximum Junction-to-Case
B
Steady-State
°C/W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
Steady-State
°C/W
t
≤
10s
R
θ
JA
A
45
1.6
Junction and Storage Temperature Range
°C
-55 to 150
T
A
=70°C
1.0
Continuous Drain
Current R
θ
JA
=75°C/W
Pulsed Drain Current
C
Maximum
20
±12
Units
Parameter
Drain-Source Voltage
T
A
=25°C
T
A
=70°C
I
D
8
V
Power Dissipation
A
R
θ
JA
=75°C/W
T
A
=25°C
W
P
DSM
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
6.3
Gate-Source Voltage
AON5800
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AON5800 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V
GS(MAX)
rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration.
Standard Product AON5800 is Pb-
free (meets ROHS & Sony 259 specifications).
AON5800L is a Green Product ordering option.
AON5800 and AON5800L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 8 A (V
GS
= 10V)
R
DS(ON)
< 16 m
Ω
(V
GS
= 10V)
R
DS(ON)
< 20 m
Ω
(V
GS
= 4.5V)
R
DS(ON)
< 21 m
(V
GS
= 4.0V)
R
DS(ON)
< 22 m
(V
GS
= 3.1V)
R
DS(ON)
< 27 m
Ω
(V
GS
= 2.5V)
R
DS(ON)
< 45 m
Ω
(V
GS
= 1.8V)
ESD Rating: 2000V HBM
Top View
Bottom View
G1
G2
S1
S2
D
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AON5802 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AON5802_07 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor |
| AON5802A | 功能描述:MOSFET DUAL N-CH 30V 7.2A 6-DFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AON5802ALS | 功能描述:MOSFET N-CH DUAL DFN 制造商:alpha & omega semiconductor inc. 系列:* 包裝:帶卷（TR） 零件狀態(tài):停產(chǎn) 安裝類型:表面貼裝 封裝/外殼:6-SMD，扁平引線裸焊盤(pán) 供應(yīng)商器件封裝:6-DFN-EP（2x5） 標(biāo)準(zhǔn)包裝:3,000 |
| AON5802B | 功能描述:MOSFET N-CH 30V 7.2A DFN2X5 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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