參數(shù)資料
型號： AON5800
廠商： ALPHA
英文描述： Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述： 常見的漏雙N溝道增強型場效應晶體管
文件頁數(shù)： 2/4頁
文件大?。?/td> 140K
代理商： AON5800
AON5800
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
10
T
J
=55°C
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
μ
A
V
V
A
±12
0.5
30
0.73
1
13
18
16
17
18
22
35
28
0.74
16
22
20
21
22
27
45
T
J
=125°C
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
S
V
A
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
0.5
1
2.5
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1330
182
161
1.5
pF
pF
pF
Ω
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
13.1
2
3.9
6.2
11
40.5
10
18.8
8.1
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=8A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8A
Reverse Transfer Capacitance
Gate resistance
I
F
=8A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=10V, f=1MHz
Gate-Source Breakdown Voltage
Gate Threshold Voltage
I
DSS
μ
A
V
DS
=V
GS
,
I
D
=250
μ
A
V
DS
=0V, I
G
=±250uA
V
DS
=0V, V
GS
=±10V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
Ω
V
GS
=1.8V, I
D
=4.5A
V
DS
=5V, I
D
=8A
I
S
=1A,V
GS
=0V
V
GS
=4.5V, I
D
=7A
V
GS
=4.0V, I
D
=6A
V
GS
=2.5V, I
D
=6A
V
GS
=3.1V, I
D
=6A
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
V
GS
=4.5V, V
DS
=10V, I
D
=8A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Total Gate Charge
Input Capacitance
Output Capacitance
V
GS
=5V, V
DS
=10V, R
L
=1.25
Ω
,
R
GEN
=3
Ω
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
Rev 6: Dec. 2005
Alpha & Omega Semiconductor, Ltd.
相關PDF資料
PDF描述
AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AOP600 Complementary Enhancement Mode Field Effect Transistor
AOP600L Complementary Enhancement Mode Field Effect Transistor
AOP601 Complementary Enhancement Mode Field Effect Transistor
AOP601L Complementary Enhancement Mode Field Effect Transistor
相關代理商/技術參數(shù)
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