- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375339 > AOP600 (ALPHA) Complementary Enhancement Mode Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | AOP600 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強模式互補場效應晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 147K |
| 代理商： | AOP600 |
Symbol
V
DS
V
GS
Max p-channel
-30
±20
-6.6
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
Typ
40
67
33
Max
50
80
40
R
θ
JL
Symbol
Typ
38
66
30
Max
50
80
40
R
θ
JL
Maximum Junction-to-Lead
C
Steady-State
°C/W
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Units
°C/W
t
≤
10s
Steady-State
R
θ
JA
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Thermal Characteristics: p-channel
Steady-State
Steady-State
°C/W
°C/W
°C/W
Units
°C/W
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Thermal Characteristics: n-channel
Parameter
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
T
A
=70°C
Power Dissipation
T
A
=25°C
P
D
30
±20
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
B
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Max n-channel
W
7.5
6
30
2.5
1.6
-5.3
-30
2.5
1.6
A
T
A
=25°C
T
A
=70°C
I
D
AOP600
Complementary Enhancement Mode Field Effect Transistor
Features
n-channel p-channel
V
DS
(V) = 30V -30V
I
D
= 7.5A (V
GS
= 10V) -6.6A
R
DS(ON)
< 28m
< 35m
(V
GS
=
-
10V)
< 43m
< 58m
(V
GS
=
-
4.5V)
General Description
The AOP600 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AOP600 is Pb-free (meets ROHS
& Sony 259 specifications). AOP600L is a Green
Product ordering option. AOP600 and AOP600L are
electrically identical.
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
PDIP-8
G2
D2
S2
G1
D1
S1
n-channel
p-channel
Alpha & Omega Semiconductor, Ltd.
相關PDF資料 |
PDF描述 |
|---|---|
| AOP600L | Complementary Enhancement Mode Field Effect Transistor |
| AOP601 | Complementary Enhancement Mode Field Effect Transistor |
| AOP601L | Complementary Enhancement Mode Field Effect Transistor |
| AOP605 | Plastic Encapsulated Device |
| AOP605_06 | Plastic Encapsulated Device |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| AOP600L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP601 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP601L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP604 | 制造商:OPTEK 制造商全稱:OPTEK 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AOP605 | 功能描述:MOSFET N/P-CH COMPL 30V 8-PDIP RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
發(fā)布緊急采購，3分鐘左右您將得到回復。