參數(shù)資料
型號： AON4701
廠商： ALPHA
英文描述： P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： P通道增強模式場的肖特基二極管晶體管
文件頁數(shù)： 2/5頁
文件大小： 177K
代理商： AON4701
AON4701
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-20
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1
nA
V
A
-0.3
-15
-0.63
73
102
95
123
7
-0.83
90
125
120
160
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
4
S
V
A
-1
-2
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
540
72
49
12
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
SCHOTTKY PARAMETERS
V
F
Forward Voltage Drop
6.1
0.6
1.6
10
12
44
22
21
7.5
nC
nC
nC
ns
ns
ns
ns
ns
nC
0.39
0.5
0.1
20
V
C
T
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 0. December 2005
34
5.2
0.8
pF
ns
nC
10
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
SchottkyReverse Recovery Time
Schottky Reverse Recovery Charge
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
mA
V
R
=16V, T
J
=125°C
V
R
=10V
Junction Capacitance
I
F
=0.5A
V
R
=16V
I
rm
Maximum reverse leakage current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=-3.8A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=-1.8V, I
D
=-1.5A
V
DS
=-5V, I
D
=-3.4A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.4A
Reverse Transfer Capacitance
Gate resistance
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=-2.5V, I
D
=-2.5A
I
S
=-1A,V
GS
=0V
I
F
=-3.8A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.8A
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.6
,
R
GEN
=3
V
GS
=0V, V
DS
=0V, f=1MHz
Input Capacitance
Output Capacitance
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AON4701L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor
AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AON4701L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4703 功能描述:MOSFET P-CH -20V -3.4A 8-DFN RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
AON4703_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET with Schottky Diode
AON4705L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4803 功能描述:MOSFET 2P-CH 20V 3.4A DFN3X2 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*