參數(shù)資料
型號： AON4701
廠商： ALPHA
英文描述： P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述： P通道增強模式場的肖特基二極管晶體管
文件頁數(shù)： 1/5頁
文件大小： 177K
代理商： AON4701
Symbol
V
DS
V
GS
Units
V
V
T
A
=25°C
T
A
=70°C
I
DM
V
KA
V
T
A
=25°C
T
A
=70°C
I
FM
T
A
=25°C
T
A
=70°C
T
J
, T
STG
°C
Symbol
Units
R
θ
JL
R
θ
JL
130
50
Maximum Junction-to-Lead
C
Steady-State
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
t
≤
10s
Steady-State
R
θ
JA
60
89
75
°C/W
75
100
45
°C/W
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Steady-State
Steady-State
81
37
Maximum Junction-to-Ambient
A
t
≤
10s
R
θ
JA
49
Parameter: Thermal Characteristics MOSFET
Typ
Max
W
1.1
0.62
Junction and Storage Temperature Range
-55 to 150
-55 to 150
Power Dissipation
P
D
1.7
0.96
A
1.2
7
Pulsed Forward Current
B
Schottky reverse voltage
20
1.9
Continuous Forward Current
A
I
F
A
-2.7
-15
Pulsed Drain Current
B
Gate-Source Voltage
±8
-3.4
Continuous Drain Current
A
I
D
Parameter
Drain-Source Voltage
MOSFET
-20
Schottky
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
AON4701
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
Features
V
DS
(V) = -20V
I
D
= -3.4A (V
GS
= -4.5V)
R
DS(ON)
< 90m
Ω
(V
GS
= -4.5V)
R
DS(ON)
< 120m
Ω
(V
GS
= -2.5V)
R
DS(ON)
< 160m
Ω
(V
GS
= -1.8V)
SCHOTTKY
V
DS
(V) = 20V, I
F
= 1A, V
F
<0.5V@0.5A
General Description
The AON4701 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. A
Schottky diode is provided to facilitate the implementation
of a bidirectional blocking switch, or for DC-DC
conversion applications. Standard Product AON4701 is
Pb-free (meets ROHS & Sony 259 specifications).
AON4701L is a Green Product ordering option. AON4701
and AON4701L are electrically identical.
DFN
3
X
2
A
K
G
D
S
G
S
A
A
D
D
K
K
1
2
3
4
8
7
6
5
相關PDF資料
PDF描述
AON4701L P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4803 Dual P-Channel Enhancement Mode Field Effect Transistor
AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
相關代理商/技術參數(shù)
參數(shù)描述
AON4701L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4703 功能描述:MOSFET P-CH -20V -3.4A 8-DFN RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
AON4703_10 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:20V P-Channel MOSFET with Schottky Diode
AON4705L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
AON4803 功能描述:MOSFET 2P-CH 20V 3.4A DFN3X2 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
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