參數(shù)資料
型號(hào)： AON4602L
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 162K
代理商： AON4602L
AON4602
Symbol
Min
Typ
Max
Units
BV
DSS
-20
V
-1
T
J
=55°C
-5
I
GSS
±100
nA
V
GS(th)
I
D(ON)
-0.3
-15
-0.63
-1
V
A
73
90
T
J
=125°C
102
125
95
120
m
Ω
123
160
m
Ω
g
FS
V
SD
I
S
4
7
S
V
-0.83
-1
-2
A
C
iss
540
pF
C
oss
C
rss
R
g
72
pF
49
pF
Ω
12
Q
g
6.1
nC
Q
gs
0.6
nC
Q
gd
1.6
nC
t
D(on)
10
ns
t
r
12
ns
t
D(off)
44
ns
t
f
t
rr
22
ns
21
ns
nC
Q
rr
7.5
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F
=-3.8A, dI/dt=100A/
μ
s
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
Rev 0. Jan. 2006
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-16V, V
GS
=0V
V
GS
=-1.8V, I
D
=-1.5A
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-3.4A
Reverse Transfer Capacitance
p-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=-250
μ
A
V
DS
=0V, V
GS
=±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
m
Ω
V
GS
=-2.5V, I
D
=-2.5A
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-3.4A
I
F
=-3.8A, dI/dt=100A/
μ
s
V
GS
=0V, V
DS
=-10V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-3.8A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-10V, R
L
=2.6
Ω
,
R
GEN
=3
Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Alpha & Omega Semiconductor, Ltd.
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