參數(shù)資料
型號(hào)： AO6603
廠商： ALPHA
英文描述： Complementary Enhancement Mode Field Effect Transistor
中文描述： 增強(qiáng)模式互補(bǔ)場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 285K
代理商： AO6603
AO6603
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
-30
V
-1
-5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
±100
-1.4
nA
V
A
-0.6
-10
-1
107
135
T
J
=125°C
135
195
8
-0.85
185
265
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
S
V
A
-1
-1.35
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
Gate Source Charge
Gate Drain Charge
409
55
42
12
pF
pF
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
0.72
1.34
4.8
8.5
10
55
25.5
26
15.6
nC
nC
nC
ns
ns
ns
ns
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: August 2005
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-2.5A, dI/dt=100A/
μ
s
I
F
=-2.5A, dI/dt=100A/
μ
s
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=-10V, V
DS
=-15V, R
L
=6
,
R
GEN
=6
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=-4.5V, V
DS
=-15V, I
D
=-2.5A
Maximum Body-Diode Continuous Current
V
GS
=0V, V
DS
=-15V, f=1MHz
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-2.3A
I
S
=-1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=-10V, I
D
=-2.3A
m
V
GS
=-4.5V, I
D
=-2A
V
GS
=-2.5V, I
D
=-1A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=-250
μ
A
V
GS
=-4.5V, V
DS
=-5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±12V
Drain-Source Breakdown Voltage
I
D
=-250
μ
A, V
GS
=0V
V
DS
=-24V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
P-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
value in any n application depends on the user's specific board design. The current rating is based on the t
≤
R5
SOA curve provides a single pulse rating.
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on t 10s thermal resistance
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料
PDF描述
AO6603L Complementary Enhancement Mode Field Effect Transistor
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AO6605L Complementary Enhancement Mode Field Effect Transistor
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AO6700L N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AO6603L 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO6604 功能描述:MOSFET N/P-CH COMPL 20V 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
AO6604L 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Enhancement Mode Field Effect Transistor
AO6604L_001 功能描述:MOSFET N/P-CH 20V 6-TSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過(guò)期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門(mén) 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:3.4A，2.5A 不同?Id，Vgs 時(shí)的?Rds On（最大值）:60 毫歐 @ 3.4A，4.5V 不同 Id 時(shí)的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時(shí)的柵極電荷（Qg）:3.8nC @ 4.5V 不同 Vds 時(shí)的輸入電容（Ciss）:320pF @ 10V 功率 - 最大值:1.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-74，SOT-457 供應(yīng)商器件封裝:6-TSOP 標(biāo)準(zhǔn)包裝:1
AO6605 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor
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