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參數(shù)資料
| 型號： | AO6603 |
| 廠商： | ALPHA |
| 英文描述： | Complementary Enhancement Mode Field Effect Transistor |
| 中文描述： | 增強(qiáng)模式互補(bǔ)場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 285K |
| 代理商： | AO6603 |
AO6603
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
20
V
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
25
0.8
nA
V
A
0.4
5
0.55
186
262
241
326
2.8
0.69
225
315
290
425
T
J
=125°C
m
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
Input Capacitance
S
V
A
1
0.4
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
Total Gate Charge
101
17
14
3
125
pF
pF
pF
4
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
1.57
0.13
0.36
3.2
4
15.5
2.4
8.1
nC
nC
nC
ns
ns
ns
ns
6.7
1.6
16
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
V
GS
=5V, V
DS
=10V, R
L
=3
,
R
GEN
=3
I
F
=1A, dI/dt=100A/
μ
s
I
F
=1A, dI/dt=100A/
μ
s
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=1.8V, I
D
=0.7A
V
DS
=5V, I
D
=1.7A
I
S
=1A,V
GS
=0V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=1.7A
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=2.5V, I
D
=1A
Gate Threshold Voltage
On state drain current
V
DS
=V
GS
I
D
=250
μ
A
V
GS
=4.5V, V
DS
=5V
μ
A
Gate-Body leakage current
V
DS
=0V, V
GS
=±8V
Drain-Source Breakdown Voltage
I
D
=250
μ
A, V
GS
=0V
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
N-channel MOSFET Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=10V, f=1MHz
Body Diode Reverse Recovery Charge
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=4.5V, V
DS
=10V, I
D
=1.7A
Body Diode Reverse Recovery Time
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
Rev 2: Sept 2005
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
Alpha & Omega Semiconductor, Ltd.
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| AO6603L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO6604 | 功能描述:MOSFET N/P-CH COMPL 20V 6-TSOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO6604L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Complementary Enhancement Mode Field Effect Transistor |
| AO6604L_001 | 功能描述:MOSFET N/P-CH 20V 6-TSOP 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:N 和 P 溝道 FET 功能:邏輯電平門 漏源極電壓（Vdss）:20V 電流 - 連續(xù)漏極（Id）（25°C 時）:3.4A，2.5A 不同?Id，Vgs 時的?Rds On（最大值）:60 毫歐 @ 3.4A，4.5V 不同 Id 時的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:3.8nC @ 4.5V 不同 Vds 時的輸入電容（Ciss）:320pF @ 10V 功率 - 最大值:1.1W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:SC-74，SOT-457 供應(yīng)商器件封裝:6-TSOP 標(biāo)準(zhǔn)包裝:1 |
| AO6605 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Complementary Enhancement Mode Field Effect Transistor |
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