參數(shù)資料
型號(hào): AO4918AL
廠商: ALPHA
英文描述: Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
中文描述: 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 149K
代理商: AO4918AL
AO4918A
Q1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
0
1
2
3
4
5
0
5
10
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
G
100
1000
10000
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
C
iss
0
0.001
10
20
30
40
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
P
0.01
0.00001
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
J
T
C
rss
0.1
1.0
10.0
100.0
0.1
1
10
100
V
DS
(Volts)
I
D
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
μ
s
10ms
1ms
0.1s
1s
10s
DC
R
DS(ON)
limited
10
μ
s
V
DS
=15V
I
D
=9.3A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=62.5°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
f=1MHz
V
GS
=0V
T
J(Max)
=150°C, T
A
=25°C
Alpha Omega Semiconductor, Ltd.
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