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參數(shù)資料
| 型號(hào)： | AO4918AL |
| 廠商： | ALPHA |
| 英文描述： | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 非對(duì)稱雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 149K |
| 代理商： | AO4918AL |
AO4918A
Symbol
Units
R
θ
JL
Symbol
Units
R
θ
JL
R
θ
JL
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
81.9
30.5
110
40
Maximum Junction-to-Lead
C
Steady-State
Max
62.5
110
°C/W
°C/W
Parameter: Thermal Characteristics MOSFET Q2
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Typ
53
Max
62.5
t
≤
10s
Steady-State
R
θ
JA
40
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
40
53
81.9
30.5
°C/W
Maximum Junction-to-Lead
C
Steady-State
Typ
Maximum Junction-to-Ambient
A
Steady-State
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient
A
t
≤
10s
50.4
86
26.6
R
θ
JA
62.5
110
t
≤
10s
Steady-State
Steady-State
R
θ
JA
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward
drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip
separately.
Rev 0 : Aug 2005
Alpha Omega Semiconductor, Ltd.
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|---|---|
| AO4918L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
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| AO4924 | 功能描述:MOS N CH DUAL 30V 9A 7.3A SOIC RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:SRFET™ 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
| AO4924_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
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