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參數資料
| 型號： | AO4914 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應晶體管肖特基二極管 |
| 文件頁數： | 6/8頁 |
| 文件大?。?/td> | 147K |
| 代理商： | AO4914 |
AO4914, AO4914L
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
0.003
1
5
T
J
=55°C
I
GSS
V
GS(th)
I
D(ON)
100
3
nA
V
A
1
1.8
30
15.5
22.3
23
23
0.75
18
27
28
T
J
=125°C
m
g
FS
V
SD
I
S
DYNAMIC PARAMETERS
S
V
A
1
3
C
iss
C
oss
C
rss
R
g
SWITCHING PARAMETERS
1040
180
110
0.7
1250
pF
pF
pF
0.85
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
provides a single pulse rating.
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
16.7
6.7
23
11.2
nC
nC
nC
nC
ns
ns
ns
ns
7.5
6.5
26
5
21
10
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
I
F
=8.5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
Gate resistance
I
F
=8.5A, dI/dt=100A/
μ
s
Q2 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
I
DSS
μ
A
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
V
DS
=0V, V
GS
= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
m
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8.5A
I
S
=1A,V
GS
=0V
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Input Capacitance
Output Capacitance
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=8.5A
Total Gate Charge
V
GS
=0V, V
DS
=15V, f=1MHz
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve
Alpha & Omega Semiconductor, Ltd.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應商器件封裝:8-SO 標準包裝:1 |
| AO4914_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914L | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應商器件封裝:8-SO 標準包裝:1 |
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