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參數(shù)資料
| 型號： | AO4918A |
| 廠商： | ALPHA |
| 英文描述： | NYLON INSULATED W/INSULATION GRIP BUTT CONNECTOR |
| 中文描述： | 非對稱雙N溝道增強型場效應晶體管 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 149K |
| 代理商： | AO4918A |
Symbol
V
DS
V
GS
Max Q2
Units
V
V
I
DM
T
J
, T
STG
°C
Symbol
V
DS
I
FM
T
J
, T
STG
Junction and Storage Temperature Range
Power Dissipation
A
W
1.28
-55 to 150
°C
2
T
A
=70°C
Pulsed Diode Forward Current
B
Continuous Forward
Current
A
P
D
I
F
T
A
=25°C
T
A
=70°C
Units
V
30
3
T
A
=25°C
Parameter
Reverse Voltage
A
2.2
20
Maximum Schottky
Max Q1
30
±12
9.3
7.4
T
A
=25°C
T
A
=70°C
Power Dissipation
Junction and Storage Temperature Range
P
D
Pulsed Drain Current
B
Continuous Drain
Current
A
I
D
A
6.7
30
2
1.28
40
2
8.5
W
-55 to 150
-55 to 150
1.28
T
A
=25°C
T
A
=70°C
Gate-Source Voltage
±20
30
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Drain-Source Voltage
AO4918A
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 9.3A I
D
=8.5A
R
DS(ON)
< 14.5m
<18m
(V
GS
= 10V)
R
DS(ON)
< 16m
<27m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4918A uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A Schottky diode is co-packaged in
parallel with the synchronous MOSFET to boost
efficiency further.
AO4918A is Pb-free (meets ROHS
& Sony 259 specifications). AO4918AL is a Green
Product ordering option. AO4918A and AO4918AL
are electrically identical.
SOIC-8
G1
S1/A
D2
D2
D1/S2/K
D1/S2/K
D1/S2/K
G2
1
2
3
4
8
7
6
5
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
Alpha & Omega Semiconductor, Ltd.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AO4918AL | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4918 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4918L | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4922 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4924 | Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4918AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4918L | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4922 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4922_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Asymmetric Dual N-Channel MOSFET |
| AO4924 | 功能描述:MOS N CH DUAL 30V 9A 7.3A SOIC RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 陣列 系列:SRFET™ 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標準包裝:1 系列:- FET 型:2 個 N 溝道（雙） FET 特點:邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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