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參數(shù)資料
| 型號： | AO4914 |
| 廠商： | ALPHA |
| 英文描述： | Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| 中文描述： | 雙N溝道增強型場效應(yīng)晶體管肖特基二極管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 147K |
| 代理商： | AO4914 |
AO4914, AO4914L
Symbol
STATIC PARAMETERS
Min
Typ
Max
Units
BV
DSS
30
V
0.007
0.05
3.2
12
10
20
100
3
I
GSS
V
GS(th)
I
D(ON)
nA
V
A
1
30
1.8
15.5
22.3
23
23
0.45
18
27
28
T
J
=125°C
m
g
FS
V
SD
I
S
S
V
A
0.5
3.5
C
iss
C
oss
C
rss
R
g
971
190
110
0.7
1165
pF
pF
pF
0.85
Q
g
(10V)
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
19.2
9.36
2.6
4.2
5.2
4.4
17.3
3.3
18.8
9.2
23
11.2
nC
nC
nC
nC
ns
ns
ns
ns
7.5
6.5
26
5
23
11
ns
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode + Schottky Reverse Recovery Time
Body Diode + Schottky Reverse Recovery Charge
I
F
=8.5A, dI/dt=100A/
μ
s
Drain-Source Breakdown Voltage
On state drain current
I
D
=250
μ
A, V
GS
=0V
V
R
=30V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=8.5A
Reverse Transfer Capacitance
Gate resistance
I
F
=8.5A, dI/dt=100A/
μ
s
V
R
=30V, T
J
=125°C
V
R
=30V, T
J
=150°C
V
DS
=0V, V
GS
= ±20V
Q1 Electrical Characteristics (T
J
=25°C unless otherwise noted)
Parameter
Conditions
Forward Transconductance
Diode + Schottky Forward Voltage
Maximum Body-Diode + Schottky Continuous Current
I
DSS
mA
Gate Threshold Voltage
V
DS
=V
GS
I
D
=250
μ
A
Zero Gate Voltage Drain Current.
(Set by Schottky leakage)
Gate-Body leakage current
V
GS
=0V, V
DS
=0V, f=1MHz
m
V
GS
=4.5V, I
D
=6A
V
DS
=5V, I
D
=8.5A
I
S
=1A,V
GS
=0V
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance (FET + Schottky)
R
DS(ON)
Static Drain-Source On-Resistance
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=15V, R
L
=1.8
,
R
GEN
=3
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=8.5A
Total Gate Charge
Total Gate Charge
Gate Source Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any a given
application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
μ
s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
pulse rating.
F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and
recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately.
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA curve provides a single
Alpha & Omega Semiconductor, Ltd.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AO4914_101 | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標準包裝:1 |
| AO4914_11 | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:30V Dual N-Channel MOSFET with Schottky Diode |
| AO4914A | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914AL | 制造商:AOSMD 制造商全稱:Alpha & Omega Semiconductors 功能描述:Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode |
| AO4914L | 功能描述:MOSFET 2N-CH 30V 8A 制造商:alpha & omega semiconductor inc. 系列:- 包裝:帶卷（TR） 零件狀態(tài):過期 FET 類型:2 個 N 溝道（雙） FET 功能:標準 漏源極電壓（Vdss）:30V 電流 - 連續(xù)漏極（Id）（25°C 時）:8A 不同?Id，Vgs 時的?Rds On（最大值）:20.5 毫歐 @ 8A，10V 不同 Id 時的 Vgs（th）（最大值）:2.4V @ 250μA 不同 Vgs 時的柵極電荷（Qg）:18nC @ 10V 不同 Vds 時的輸入電容（Ciss）:865pF @ 15V 功率 - 最大值:2W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:表面貼裝 封裝/外殼:8-SOIC 供應(yīng)商器件封裝:8-SO 標準包裝:1 |
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