參數(shù)資料
型號(hào): AO4916AL
廠商: ALPHA
英文描述: Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
中文描述: 雙N溝道增強(qiáng)型場(chǎng)效應(yīng)晶體管肖特基二極管
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 149K
代理商: AO4916AL
Absolute Maximum Ratings T =25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
T
A
=70°C
Pulsed Drain Current
B
T
A
=25°C
T
A
=70°C
Junction and Storage Temperature Range
Symbol
V
DS
V
GS
Max Q1
30
±20
8.5
6.6
30
2
1.28
-55 to 150
Max Q2
Units
V
V
30
±20
8.5
6.6
30
2
1.28
T
A
=25°C
I
D
I
DM
A
Power Dissipation
P
D
W
T
J
, T
STG
-55 to 150
°C
Parameter
Reverse Voltage
Continuous Forward
Current
A
Pulsed Diode Forward Current
B
Symbol
V
DS
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
T
A
=25°C
T
A
=70°C
I
F
I
FM
A
Power Dissipation
A
Junction and Storage Temperature Range
T
A
=25°C
T
A
=70°C
P
D
W
T
J
, T
STG
°C
AO4916A
Dual N-Channel Enhancement Mode Field Effect Transistor with
Schottky Diode
Features
Q1 Q2
V
DS
(V) = 30V V
DS
(V) = 30V
I
D
= 8.5A
(
V
GS
= 10V)
I
D
= 8.5A
(
V
GS
= 10V)
R
DS(ON)
< 17m
<17m
(V
GS
= 10V)
R
DS(ON)
< 27m
<27m
(V
GS
= 4.5V)
SCHOTTKY
V
DS
(V) = 30V, I
F
= 3A, V
F
<0.5V@1A
General Description
The AO4916A uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard product
AO4916A is Pb-free (meets ROHS &
Sony 259 specifications). AO4916AL is a Green Product
ordering option. AO4916A and AO4916AL are
electrically identical.
SOIC8
G1
D1
S1
K
A
G2
D2
S2
Q1
Q2
G1
D2
D2
G2
D1/S2/K
1
2
3
4
8
7
6
5
S1/A
D1/S2/K
D1/S2/K
Alpha & Omega Semiconductor, Ltd.
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