參數(shù)資料
型號: AN2635
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: On-Chip FLASH Programming Routines
中文描述: 片上閃存編程例程
文件頁數(shù): 5/36頁
文件大?。?/td> 150K
代理商: AN2635
How to Use the Routines
On-Chip FLASH Programming Routines, Rev. 4
Freescale Semiconductor
5
Table 3. Summary of On-Chip FLASH Support Routines
GetByte
PutByte
RDVRRNG
Read and/or
verify
a FLASH
range
PRGRNGE
Program a
FLASH range
(maximum 32
bytes in a row)
ERARNGE
DELNUS
Generate
delay
3
×
A
×
X + 8
(cycles)
Routine
Description
Getadatabyte
seriallythrough
PTA0
Send a data
byte serially
through PTA0
Erase a PAGE
or entire array
Internal
Operating
Frequency
(
f
op
)
1 MHz to
8.4 MHz
1 MHz to
8.4 MHz
Hardware
Requirement
Pullup on PTA0 Pullup on PTA0
For send-out
option, pullup
on PTA0
H:X: First
address of
range
LADDR: Last
address of
range
A: A = $00 for
send-out
option or
A
$00 for
verify option
For send-out
option
PTA0: Input
and 0 data bit
(DDRA0 = 0,
PTA0 = 0)
For verify
option,
DATA array:
Load data to
be verified
against
FLASH read
data
N/A
N/A
N/A
Entry
Conditions
PTA0: Input
(DDRA0 = 0)
PTA0: Input
and 0 data bit
(DDRA0 = 0,
PTA0 = 0)
A: data to be
sent
H:X: First
address
of range
LADDR: Last
address of
range
CPUSPD: the
nearest
integer
f
op
(in
MHz) times 4
Data array:
Load data
to be
programmed
H:X: Address
within a page
or an array to
be erased
CPUSPD: the
nearest
integer
f
op
(in
MHz) times 4
CTRLBYT:
$40 = MASS
erase
$00 = PAGE
erase
A: Value
between
4 and 255
X: Value
between
1 and 255
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