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參數(shù)資料
| 型號(hào)： | AM50DL128CH |
| 英文描述： | Am50DL128CH - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | Am50DL128CH -堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁(yè)數(shù)： | 30/70頁(yè) |
| 文件大?。?/td> | 1042K |
| 代理商： | AM50DL128CH |
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May 19, 2003
Am50DL9608G
29
P R E L I M I N A R Y
Table 16.
Am29DL640G Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Description
27h
4Eh
0017h
Device Size = 2
N
byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0003h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0007h
0000h
0020h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
007Dh
0000h
0000h
0001h
Erase Block Region 2 Information
(refer to the CFI specification or CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0007h
0000h
0020h
0000h
Erase Block Region 3 Information
(refer to the CFI specification or CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
0000h
0000h
0000h
Erase Block Region 4 Information
(refer to the CFI specification or CFI publication 100)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM50DL128CH_04 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
| AM50DL128CH56IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
| AM50DL128CH56IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:STACKED MULTI-CHIP PACKAGE (MCP) FLASH MEMORY AND SRAM |
| AM50DL128CH70IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
| AM50DL128CH70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:STACKED MULTI-CHIP PACKAGE (MCP) FLASH MEMORY AND SRAM |
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