參數(shù)資料
型號: AM52-0001TR
英文描述: 1.2 W High Efficiency Power Amplifier 800 - 960 MHz
中文描述: 1.2 W高效率數(shù)字功放800 - 960兆赫
文件頁數(shù): 1/6頁
文件大?。?/td> 79K
代理商: AM52-0001TR
Specifications Subject to Change Without Notice.
M/A-COM Inc.
North America: Tel. (800) 366-2266
Asia/Pacific: Tel. +81 3 3226-8761
Europe:
Fax (800) 618-8883 Fax +81 3 3226-8769
1
Tel. +44 (1344) 869-595
Fax +44 (1344) 300 020
Preliminary Release
1.2 W High Efficiency Power Amplifier
800 - 960 MHz
AM52-0001
V1.00
Features
SOIC-8 Thermally Efficient Plastic Package
+30.8 dBm Typical Power Out
Greater than 50% Typical Power Added Efficiency
21 dB typical Power Gain
Flexible External Output Matching
Description
M/A-COM’s AM52-0001 is a GaAs power amplifier in a thermally
efficient low cost SOIC-8 plastic package. The AM52-0001 is
designed for high efficiency 1.2 W output power and 21 dB of
associated gain in the 800-960 MHz frequency band. The
AM52-0001 is unconditionally stable in both small and large signal
operation. It features flexible biasing for improved dynamic range
and off-chip matching for improved efficiency and flexibility.
The AM52-0001 is specifically designed for high efficiency final
output power amplification in FM, GFSK and FSK type systems,
such as AMPS, ETACS, NTACS, CT1, CDPD and ISM.
M/A-COM's AM52-0001 is fabricated using a mature 0.5 micron
gate length GaAs MESFET power process. The process features
full passivation for increased performance and reliability. The
AM52-0001 can be used with standard automated SMT assembly
equipment (See M/A-COM application note M558).
SOIC-8P
.004 (.10)
.050 (1.27)
M
S
M
B
A
C
.010 (.25)
-A-
-C-
-B-
.010(.25)
B
CHAMFER
.1497/.1574
(3.80/4.00)
.2284/.2440
(5.80/6.20)
.1890/.1968
(4.80/5.00)
.013/.020 (8 PL)
(.33/.51)
.0532/.0688
(1.35/1.75)
M
M
Ordering Information
Part Number
AM52-0001
AM52-0001TR
AM52-0001SMB
* If specific reel size is required, consult factory for part number
assignment.
Package
SOIC-8 Lead Plastic
Forward Tape and Reel *
Designer’s Kit
Electrical Specifications:
V
D1
= V
D2
= 4.8V
±
5%, T
A
= +25
°
C,
Freq. = 824-849 MHz, V
GG
= V
G2
= V
G1
adjusted for 150 mA quiescent
drain Current.
Parameter
Linear Gain
Output Power
Power Gain
Power Added Efficiency
Second Harmonic
Third Harmonic
Noise Power1
Stability2
Load Mismatch3
Gate Current
Adjustable Power Control (APC)
1. Noise power (30 KHz RBW), 45 MHz above T
X
Freq range, measured under rated output power conditions.
2. Parasitic Oscillation defined as any spurious output less than 60 dBc with respect to desired signal level. Measured with nominal Pin and an output
VSWR of 10:1 any phase, V
DD
= 4.8 V.
3. No permanent degradation with nominal Pin and an output VSWR of 10:1 at any phase (360
°
rotation in 10 sec.) with V
DD
up to 6V. .
Test Conditions
Units
dB
dBm
dB
%
dBc
dBc
dBm
VSWR
VSWR
mA
dB
Min.
Typ.
29
30.8
21
55
-30
-50
-92
Max.
Pin
-20 dBm
Pin = 10 dBm
10:1
10:1
5
V
D1
= 0
4.8V V
D2
= 4.8 V
27
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