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| 型號： | AM50DL128CH |
| 英文描述： | Am50DL128CH - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM |
| 中文描述： | Am50DL128CH -堆疊式多芯片封裝（MCP）閃存和SRAM |
| 文件頁數(shù)： | 11/70頁 |
| 文件大小： | 1042K |
| 代理商： | AM50DL128CH |
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10
Am50DL9608G
May 19, 2003
P R E L I M I N A R Y
Table 1.
Device Bus Operations—Flash Word Mode
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5
V, V
HH
= 9.0 ± 0.5 V, X = Don’t Care, SADD = Flash Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Other operations except for those indicated in this column are inhibited.
2. Do not apply CE#fx = V
IL
, CE1#s = V
IL
and CE2s = V
IH
at the same time.
3. Don’t care or open LB#s or UB#s.
4. If WP#/ACC = V
IL
, the boot sectors will be protected. If WP#/ACC = V
IH
the boot sectors protection will be removed.
If WP#/ACC = V
ACC
(9V), the program time will be reduced by 40%.
5. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
6. If WP#/ACC = V
, the two outermost boot sectors remain protected. If WP#/ACC = V
, the two outermost boot sector protection
depends on whether they were last protected or unprotected using the method described in “Sector/Sector Block Protection and
Unprotection”. If WP#/ACC = V
HH,
all sectors will be unprotected.
7. Only one flash device should be accessed at a time. For Am29DL640G flash access, CE#f1 = V
IL
, CE#f2 = V
IH
. For
Am29DL320G flash access, CE#f1 = V
IH
, CE#f2 = V
iL
.
8. CE#1s= V
IL
, CE2s= V
IH
, CE#f1=V
IH
and CE#f2=V
IH
when accessing pseudo SRAM.
Operation
(Notes 1, 2)
CE#f1
CE#f2
(Note 7)
CE1#s
(Note 8)
CE2s
(Note 8)
OE# WE#
Addr.
LB#s UB#s RESET#
WP#/
ACC
(Note 4)
DQ7–
DQ0
DQ15–
DQ8
Read from Flash
L
H
X
L
H
A
IN
X
X
H
L/H
D
OUT
D
OUT
X
L
Write to Flash
L
H
X
H
L
A
IN
X
X
H
(Note 4)
D
IN
D
IN
X
L
Standby
V
CC
±
0.3 V
H
X
X
X
X
X
X
V
CC
±
0.3 V
H
High-Z
High-Z
X
L
Output Disable
L
L
H
H
H
X
L
X
H
L/H
High-Z
High-Z
H
H
X
X
L
Flash Hardware
Reset
X
H
X
X
X
X
X
X
L
L/H
High-Z
High-Z
X
L
Sector Protect
(Note 5)
L
H
X
H
L
SADD,
A6 = L,
A1 = H,
A0 = L
X
X
V
ID
L/H
D
IN
X
X
L
Sector Unprotect
(Note 5)
L
H
X
H
L
SADD,
A6 = H,
A1 = H,
A0 = L
X
X
V
ID
(Note 6)
D
IN
X
X
L
Temporary Sector
Unprotect
X
H
X
X
X
X
X
X
V
ID
(Note 6)
D
IN
High-Z
X
L
Read from Pseudo
SRAM
H
L
H
L
H
A
IN
L
L
H
X
D
OUT
High-Z
D
OUT
D
OUT
High-Z
H
L
L
H
D
OUT
D
IN
High-Z
Write to Pseudo
SRAM
H
L
H
X
L
A
IN
L
L
H
X
D
IN
D
IN
H
L
L
H
D
IN
High-Z
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| AM50DL128CH_04 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
| AM50DL128CH56IS | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Two Am29DL640G 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories |
| AM50DL128CH56IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:STACKED MULTI-CHIP PACKAGE (MCP) FLASH MEMORY AND SRAM |
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| AM50DL128CH70IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:STACKED MULTI-CHIP PACKAGE (MCP) FLASH MEMORY AND SRAM |
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