參數(shù)資料
型號(hào)： AM49DL3208G
英文描述： Am49DL3208G - Stacked Multi-Chip Package (MCP) Flash Memory and pSRAM
中文描述： Am49DL3208G -堆疊式多芯片封裝（MCP）的閃存和移動(dòng)存儲(chǔ)芯片
文件頁(yè)數(shù)： 45/62頁(yè)
文件大?。?/td> 933K
代理商： AM49DL3208G
September 19, 2003
Am49DL3208G
43
A D V A N C E I N F O R M A T I O N
FLASH AC CHARACTERISTICS
Flash Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Flash Erase And Programming Performance” section for more information.
Parameter
All Speed Options
Unit
JEDEC
Std
Description
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
70
ns
t
AVWL
t
AS
Address Setup Time (WE# to Address)
Min
0
ns
t
ASO
Address Setup Time to OE# or
CE#f
Low During Toggle
Bit Polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time (WE# to Address)
Min
45
ns
t
AHT
Address Hold Time From CE#f or OE# High During Toggle
Bit Polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEH
OE# Hold Time
Read
Min
0
ns
Toggle and Data# Polling
Min
10
ns
t
OEPH
Output Enable High During Toggle Bit Polling
Min
20
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write (OE# High to CE#f Low)
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time (CE#f to WE#)
Min
0
ns
t
ELWL
t
CS
CE#f Setup Time (WE# to CE#f)
Min
0
ns
t
EHWH
t
WH
WE# Hold Time (CE#f to WE#)
Min
0
ns
t
WHEH
t
CH
CE#f Hold Time (CE#f to WE#)
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
30
ns
t
ELEH
t
CP
CE#f Pulse Width
Min
30
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Word
Typ
7
μs
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
4
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
VCS
V
CC
f Setup Time (Note 1)
Min
50
μs
t
RB
Write Recovery Time From RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid To RY/BY# Delay
Max
90
ns
相關(guān)PDF資料
PDF描述
AM49DL320BG Am49DL320BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM49DL32XBG Am49DL32xBG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM49DL640BH Am49DL640BH - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM50-0001 RF Amplifier
AM50-0011TR-3000 Amplifier. Other
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM49DL320BG 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Am49DL320BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
AM49DL320BGB701 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
AM49DL320BGB701S 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
AM49DL320BGB701T 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
AM49DL320BGB70IS 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*