參數(shù)資料
型號(hào)： AM30LV0064D
廠商： Advanced Micro Devices, Inc.
英文描述： 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
中文描述： 64兆位（8米× 8位）的CMOS 3.0伏特，只有UltraNAND閃存技術(shù)
文件頁(yè)數(shù)： 39/41頁(yè)
文件大?。?/td> 1067K
代理商： AM30LV0064D
Am30LV0064D
39
REVISION SUMMARY
Revision A (December 1998)
Initial release.
Revision B (December 1998)
Distinctive Characteristics
Fast read and program performance:
Noted that spec-
ifications are typical.
Command Set:
Moved Erase Suspend/Resume com-
mands from basic to superset commands.
General Description
Modified description of Embedded Erase.
Functional Pin Description
Address Latch Enable:
Clarified description relating to
address and data registers.
Read Enable:
Changed t
RSTO
to t
RLS
.
Cell Layout and Address Assignment
Figure 1:
Split 512 byte data register into two 256 byte
registers. Added representation of one page (528
bytes) to figure.
Ordering Information
Deleted extended temperature range.
Command Definitions
Added Note 8 to table.
Device Operations
First paragraph:
Clarified description of command
decoder.
Timing diagrams—all SE# waveforms in section:
Added waveform, or modified existing waveform to
show where this input is don’t care.
Erase Suspend and Erase Resume:
Noted that both
are AMD superset commands.
Figure 9, Program Operations Flow Chart:
Noted por-
tion that may be required to exceed guaranteed
endurance.
Operating Ranges
Deleted references to extended temperature and reg-
ulated voltage range.
DC Characteristics
Added test specifications table and figure.
AC Characteristics
Normal Operation table:
Clarified descriptions of t
CEH
,
t
CR
, and t
CRY
.
Mode Selection table: Added notes. Modified mode
column to show 1st and 2nd rows refer to read mode,
and 3rd and 4th rows refer to write mode. Changed
the following: SE# for read mode, command input to
L/X; RY/BY# for write mode, command input to L/H;
SE# and WP# for standby mode to X.
Timing diagrams—all SE# waveforms in section:
Added waveform, or modified existing waveform to
show where input is don’t care.
Physical Dimensions
Added TSOP II package drawings.
General Description
Added second paragraph.
Ordering Information
Added FBGA designator. In performance range de-
scription, changed “sectors” to “blocks.”
Device Operations
In fourth paragraph, third sentence, deleted the phrase
“during erase.”
In the fifth paragraph, changed “Read Data” to “Wait
For.”
Noted in the paragraph headings for gapless read,
erase suspend, and erase resume that commands are
superset.
Page Program:
In the second paragraph, fourth sen-
tence, clarified that after ten consecutive partial
program operations within a given page, the block
containing that page is erased.
Operating Ranges
Added V
CCQ
supply voltage ratings.
DC Characteristics
Test Specifications table: Split the value column into
two columns describing test conditions for different
voltage ranges.
AC Characteristics
In various figures, added breaks in waveforms where
missing, to match other waveforms in the same figure.
Erase Suspend figure:
In the I/O7-0 waveform,
changed the last data to I/O 5.
Status Read Cycle, Read Data, and Read Data (Inter-
rupted by CE#), and Read Spare Area figures:
Changed the beginning of the t
WB
parameter to match
the beginning of the t
ALH
and t
R
parameters.
Physical Dimensions
Added the FBE040 drawing.
相關(guān)PDF資料
PDF描述
AM30LV0064DJ40 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40E2IT 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40F2IT 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40WGIT 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM33C93A LJT 16C 16#16 SKT RECP
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM30LV0064DJ40 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40E21 制造商:Advanced Micro Devices 功能描述:
AM30LV0064DJ40E2I 制造商:Advanced Micro Devices 功能描述:NAND Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 35ns 44-Pin TSOP
AM30LV0064DJ40E2IT 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology
AM30LV0064DJ40F2I 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*