- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄366537 > AM30LV0064D (Advanced Micro Devices, Inc.) 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology PDF資料下載
參數(shù)資料
| 型號： | AM30LV0064D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有UltraNAND閃存技術(shù) |
| 文件頁數(shù)： | 38/41頁 |
| 文件大?。?/td> | 1067K |
| 代理商： | AM30LV0064D |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁當(dāng)前第38頁第39頁第40頁第41頁
38
Am30LV0064D
PROGRAM AND ERASE CHARACTERISTICS
VALID BLOCKS
Note:
The J40 device is guaranteed to ship with all valid blocks (no invalid blocks).
LATCHUP CHARACTERISTICS
Note:
Includes all pins except V
CC
. Test conditions: V
CC
= 3.0 V, one pin at a time.
TSOP II PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
DATA RETENTION
Symbol
Parameter
Min
Typ
Max
Unit
t
R
Read Data Transfer Time
–
6.5
7
μs
t
PGM
Page Program Time
–
0.2
1.0
ms
t
ERS
Block Erase Time
–
2
10
ms
Symbol
Parameter
Min
Typ
Max
Unit
J40 N
V/B
Number of Valid Blocks
1024
1024
1024
Blocks
Description
Min
Max
Input voltage with respect to V
SS
on all pins except I/O pins
–1.0 V
12.5 V
Input voltage with respect to V
SS
on all I/O pins
–1.0 V
V
CC
+ 1.0 V
V
CC
Current
–100 mA
+100 mA
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
6
7.5
pF
C
OUT
Output Capacitance
V
OUT
= 0
8.5
12
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
7.5
9
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
85
°
C
10
Years
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM30LV0064DJ40 | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40E2IT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40F2IT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40WGIT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM33C93A | LJT 16C 16#16 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM30LV0064DJ40 | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40E21 | 制造商:Advanced Micro Devices 功能描述: |
| AM30LV0064DJ40E2I | 制造商:Advanced Micro Devices 功能描述:NAND Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 35ns 44-Pin TSOP |
| AM30LV0064DJ40E2IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40F2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。