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參數(shù)資料
| 型號： | AM30LV0064D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有UltraNAND閃存技術(shù) |
| 文件頁數(shù)： | 26/41頁 |
| 文件大?。?/td> | 1067K |
| 代理商： | AM30LV0064D |
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26
Am30LV0064D
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65
°
C to +150
°
C
Ambient Temperature
with Power Applied . . . . . . . . . . . . . –65
°
C to +125
°
C
Voltage with Respect to Ground
V
CC
(Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
V
CCQ
(Note 2) . . . . . . . . . . . . . . . .–0.5 V to +6.0 V
All other pins (Note 1). . . . . . –0.5 V to V
CC
+0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot V
SS
to –2.0 V for periods of up to 20 ns.
Maximum DC voltage on input or I/O pins is V
CC
+0.5 V.
See Figure 13. During voltage transitions, input or I/O
pins may overshoot to V
CC
+2.0 V for periods up to 20
ns. See Figure 14.
2. For 3.0 volt-only applications, V
CCQ
should be connected
to V
CC
. To provide 5 V tolerant I/O, V
CCQ
should be
between 4.5 and 5.5 V.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This
is a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the
operational sections of this data sheet is not implied.
Exposure of the device to absolute maximum rating
conditions for extended periods may affect device reliability.
OPERATING RANGES
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . 0
°
C to +70
°
C
Industrial (I) Devices
Ambient Temperature (T
A
) . . . . . . . . . –40
°
C to +85
°
C
V
CC
Supply Voltages
V
CC
for full voltage range . . . . . . . . . . . .2.7 V to 3.6 V
V
CCQ
Supply Voltages
V
CCQ
for full voltage range . . . . . . . . . . .2.7 V to 3.6 V
V
CCQ
for 5 volt I/O tolerance. . . . . . . . . .4.5 V to 5.5 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
20 ns
20 ns
+0.8 V
V
SS
–0.5 V
20 ns
V
SS
–2.0 V
Figure 13. Maximum Negative
Overshoot Waveform
Figure 14. Maximum Positive
Overshoot Waveform
20 ns
20 ns
V
CC
+2.0 V
V
CC
+0.5 V
20 ns
2.0 V
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| AM30LV0064DJ40 | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM30LV0064DJ40 | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40E21 | 制造商:Advanced Micro Devices 功能描述: |
| AM30LV0064DJ40E2I | 制造商:Advanced Micro Devices 功能描述:NAND Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 35ns 44-Pin TSOP |
| AM30LV0064DJ40E2IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40F2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
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