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參數(shù)資料
| 型號： | AM30LV0064D |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| 中文描述： | 64兆位（8米× 8位）的CMOS 3.0伏特，只有UltraNAND閃存技術(shù) |
| 文件頁數(shù)： | 20/41頁 |
| 文件大?。?/td> | 1067K |
| 代理商： | AM30LV0064D |
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Am30LV0064D
Read Status (70h)
The Read Status operation is used to read the device
status to determine if the device is ready, in the write
protect mode, erase suspended, or if the previous pro-
gram/erase operation completed without error. After
the rising edge of the command cycle WE# pulse, the
falling edge of CE# or RE#, whichever occurs last, will
output the contents of the status register on the 8 I/O
pins, I/O7–I/O0. The status register is constantly up-
dated and does not require either CE# or RE# to be
toggled. By utilizing the Read Status operation, multi-
ple devices with RY/BY# pins wired together may be
polled to determine their specific status.
Figure 6. Device Status Register Bit Definition
Figure 7. Read Status
Program Operations
Input Data (80h)
The Input Data command sequence is the first of two
operations that must be performed to program infor-
mation into one of the Flash pages. The second
operation, Page Program, is used to transfer informa-
tion from the Data Registers to the Flash array after
the Input Data procedure loads the Data Registers. In
order to set the starting region within the Data Regis-
ters (first half, second half, or Spare Area), the
appropriate command (00h, 01h, 50h) should be is-
sued prior to the Input Data command being
performed. If a command is not submitted to assign
the starting region, the starting region will be deter-
mined by its previous state.
I/O7
I/O6
I/O5
I/O4
I/O3
I/O2
I/O1
I/O0
Program/Erase:
0 = pass, 1 = fail
Not Used
Erase Suspend:
0 = not suspended, 1 = suspended
Ready/Busy:
0 = busy, 1 = ready
Write Protect:
0 = protected, 1 = not protected
CE#
CLE
ALE
WE#
RE#
I/O7-0
SE#
RY/BY#
CMD
Read Status
Read Status
Read Status
Read Status
Read Status (70h)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| AM30LV0064DJ40 | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40E2IT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40F2IT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40WGIT | 64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM33C93A | LJT 16C 16#16 SKT RECP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| AM30LV0064DJ40 | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40E21 | 制造商:Advanced Micro Devices 功能描述: |
| AM30LV0064DJ40E2I | 制造商:Advanced Micro Devices 功能描述:NAND Flash Parallel 3V/3.3V 64Mbit 8M x 8bit 35ns 44-Pin TSOP |
| AM30LV0064DJ40E2IT | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:64 Megabit (8 M x 8-Bit) CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology |
| AM30LV0064DJ40F2I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NAND Flash EEPROM |
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