參數(shù)資料
型號(hào)： AM29LV640MH101EF
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142B, TSOP-56
文件頁數(shù)： 49/59頁
文件大?。?/td> 1590K
代理商： AM29LV640MH101EF
February 16, 2003
Am29LV640MH/L
53
ADV ANCE
I N FO RMAT I O N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25
°C, 3.0 V V
CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90
°C, V
CC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
4. Word/Byte programming specification is based upon a single word/byte programming operation not utilizing the write buffer.
5. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables
12 and 11 for further information on command definitions.
8. The device has a minimum erase and program cycle endurance of 100,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
CC. Test conditions: VCC = 3.0 V, one pin at a time.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.5
15
sec
Excludes 00h
programming
prior to erasure (Note 6)
Chip Erase Time
64
TBD
sec
Effective Write Buffer Program Time (Note 3)
Per Byte
11
TBD
s
Excludes system level
overhead (Note 7)
Per Word
22
TBD
s
Accelerated Effective Write Buffer Program
Time (Note 3)
Per Byte
8.8
TBD
s
Per Word
17.6
TBD
s
Single Byte/Word Program Time (Note 4)
Byte
100
TBD
s
Word
100
TBD
s
Accelerated Single Byte/Word Program Time
(Note 4)
Byte
90
TBD
s
Word
90
TBD
s
Chip Program Time (Note 5)
92
TBD
sec
Description
Min
Max
Input voltage with respect to V
SS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to V
SS on all I/O pins
–1.0 V
V
CC + 1.0 V
V
CC Current
–100 mA
+100 mA
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