參數(shù)資料
型號： AM29LV640MH101EF
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
封裝： MO-142B, TSOP-56
文件頁數(shù)： 1/59頁
文件大?。?/td> 1590K
代理商： AM29LV640MH101EF
ADVANCE INFORMATION
This document contains information on a product under development at Advanced Micro Devices. The information
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
product without notice.
Publication# 26191
Rev: E Amendment/+1
Issue Date: February 16, 2003
Refer to AMD’s Website (www.amd.com) for the latest information.
Am29LV640MH/L
64 Megabit (4 M x 16-Bit/8 M x 8-Bit) MirrorBit
3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O
Control
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
■ Single power supply operation
— 3 V for read, erase, and program operations
■ VersatileI/O control
— Device generates data output voltages and tolerates
data input voltages on the DQ inputs/outputs as
determined by the voltage on the V
IO pin; operates
from 1.65 to 3.6 V
■ Manufactured on 0.23 m MirrorBit process
technology
■ SecSi (Secured Silicon) Sector region
— 128-word/256-byte sector for permanent, secure
identification through an 8-word/16-byte random
Electronic Serial Number, accessible through a
command sequence
— May be programmed and locked at the factory or by
the customer
■ Flexible sector architecture
— One hundred twenty-eight 32 Kword/64-Kbyte sectors
■ Compatibility with JEDEC standards
— Provides pinout and software compatibility for
single-power supply flash, and superior inadvertent
write protection
■ Minimum 100,000 erase cycle guarantee per sector
■ 20-year data retention at 125°C
PERFORMANCE CHARACTERISTICS
■ High performance
— 90 ns access time
— 25 ns page read times
— 0.5 s typical sector erase time
— 22 s typical effective write buffer word programming
time: 16-word/32-byte write buffer reduces overall
programming time for multiple-word/byte updates
— 4-word/8-byte page read buffer
— 16-word/32-byte write buffer
■ Low power consumption (typical values at 3.0 V, 5
MHz)
— 30 mA typical active read current
— 50 mA typical erase/program current
— 1 A typical standby mode current
■ Package options
— 56-pin TSOP
— 64-ball Fortified BGA
SOFTWARE & HARDWARE FEATURES
■ Software features
— Program Suspend & Resume: read other sectors
before programming operation is completed
— Erase Suspend & Resume: read/program other
sectors before an erase operation is completed
— Data# polling & toggle bits provide status
— Unlock Bypass Program command reduces overall
multiple-word programming time
— CFI (Common Flash Interface) compliant: allows host
system to identify and accommodate multiple flash
devices
■ Hardware features
— Sector Group Protection: hardware-level method of
preventing write operations within a sector group
— Temporary Sector Unprotect: V
ID-level method of
changing code in locked sectors
— WP#/ACC input:
Write Protect input (WP#) protects first or last sector
regardless of sector protection settings
ACC (high voltage) accelerates programming time for
higher throughput during system production
— Hardware reset input (RESET#) resets device
— Ready/Busy# output (RY/BY#) indicates program or
erase cycle completion
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV640MH112REI 制造商:Advanced Micro Devices 功能描述:4M X 16 FLASH 3V PROM, 110 ns, PDSO56
AM29LV640MU101RPCI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90NI 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPC1 制造商:Advanced Micro Devices 功能描述:
AM29LV640MU90RPCI 制造商:Advanced Micro Devices 功能描述:
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