參數(shù)資料
型號(hào): AM29LV320DB120WME
廠商: SPANSION LLC
元件分類: PROM
英文描述: 2M X 16 FLASH 3V PROM, 120 ns, PBGA48
封裝: 6 X 12 MM, 0.80 MM PITCH, FBGA-48
文件頁(yè)數(shù): 36/53頁(yè)
文件大?。?/td> 1008K
代理商: AM29LV320DB120WME
July 30, 2002
Am29LV320D
41
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
Parameter
90
120
JEDEC
Std.
Description
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
50
ns
t
AHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
50
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
50
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
SR/W
Latency Between Read and Write Operations
Min
0
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Byte
Typ
9
s
Word
Typ
11
t
WHWH1
t
WHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
7
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1.6
sec
tVCS
VCC Setup Time (Note 1)
Min
50
s
t
RB
Write Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
ns
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