參數(shù)資料
型號： AM29BDS643GT7GVAF
廠商： SPANSION LLC
元件分類： PROM
英文描述： 4M X 16 FLASH 1.8V PROM, 70 ns, PBGA44
封裝： 9.20 X 8 MM, 0.50 MM PITCH, FBGA-44
文件頁數(shù)： 27/49頁
文件大?。?/td> 833K
代理商： AM29BDS643GT7GVAF
May 8, 2006 25692A2
Am29BDS643G
31
D A TA
SH EE T
DC CHARACTERISTICS
CMOS Compatible
Note:
1. Maximum ICC specifications are tested with VCC = VCCmax.
2. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. Device enters automatic sleep mode when addresses are stable for tACC + 60 ns. Typical sleep mode current is equal to ICC3.
5. Total current during accelerated programming is the sum of VPP and VCC currents.
6. Specifications assume 8 I/Os switching.
Parameter Description
Test Conditions (Note 1)
Min
Typ
Max
Unit
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCCmax
±1
A
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCCmax
±1
A
ICCB
VCC Active Burst Read Current
CE# = VIL, OE# = VIL
25
30
mA
ICC1
VCC Active Asynchronous Read
Current
CE# = VIL, OE# = VIH
5 MHz
12
16
mA
1 MHz
3.55mA
ICC2
VCC Active Write Current (Note 3)
CE# = VIL, OE# = VIH, VPP = VIH
15
40
mA
ICC3
VCC Standby Current (Note 4)
CE# = VIH, RESET# = VIH
0.2
10
A
ICC4
VCC Reset Current
RESET# = VIL, CLK = VIL
0.2
10
A
ICC5
VCC Active Current
(Read While Write)
CE# = VIL, OE# = VIL
40
60
mA
IPP
Accelerated Program Current
CE# = VIL, OE# = VIH,
VPP = 12.0 ± 0.5 V
VPP
715
mA
VCC
510
mA
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VCC – 0.4
VCC + 0.2
V
VOL
Output Low Voltage
IOL = 100 A, VCC = VCC min
0.1
V
VOH
Output High Voltage
IOH = –100 A, VCC = VCC min
VCC – 0.1
V
VID
Voltage for Accelerated Program
11.5
12.5
V
VLKO
Low VCC Lock-out Voltage
1.0
1.4
V
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