參數(shù)資料
型號(hào): AM29BDS640GTD4WSI
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
中文描述: 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80
封裝: 11 X 12 MM, 0.80 MM PITCH, FBGA-80
文件頁(yè)數(shù): 57/65頁(yè)
文件大?。?/td> 899K
代理商: AM29BDS640GTD4WSI
October 31, 2002
Am29BDS640G
59
AD V A NCE
INF O R M A T IO N
AC CHARACTERISTICS
Wait State Decoding Addresses:
A14, A13, A12 = “101”
5 programmed, 7 total
A14, A13, A12 = “100”
4 programmed, 6 total
A14, A13, A12 = “011”
3 programmed, 5 total
A14, A13, A12 = “010”
2 programmed, 4 total
A14, A13, A12 = “001”
1 programmed, 3 total
A14, A13, A12 = “000”
0 programmed, 2 total
Note: Figure assumes address D0 is not at an address boundary, active clock edge is rising, and wait state is set to “101”.
Figure 32.
Example of Wait States Insertion (Standard Handshaking Device)
Data
AVD#
OE#
CLK
12
3
4
5
D0
D1
01
6
2
7
3
total number of clock cycles
following AVD# falling edge
Rising edge of next clock cycle
following last wait state triggers
next burst data
number of clock cycles
programmed
45
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