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參數(shù)資料
| 型號： | AM29BDS640GTD4WSI |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit (4 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| 中文描述： | 4M X 16 FLASH 1.8V PROM, 14 ns, PBGA80 |
| 封裝： | 11 X 12 MM, 0.80 MM PITCH, FBGA-80 |
| 文件頁數(shù)： | 31/65頁 |
| 文件大小： | 899K |
| 代理商： | AM29BDS640GTD4WSI |
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36
Am29BDS640G
October 31, 2002
AD V A NCE
INF O R M A T IO N
TEST CONDITIONS
Table 17.
Test Specifications
KEY TO SWITCHING WAVEFORMS
SWITCHING WAVEFORMS
CL
Device
Under
Test
Figure 8.
Test Setup
Test Condition
All Speed Options
Unit
Output Load Capacitance, CL
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0–VIO
V
Input timing measurement
reference levels
VIO/2
V
Output timing measurement
reference levels
VIO/2
V
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
Figure 9.
Input Waveforms and Measurement Levels
VIO
0.0 V
Output
Measurement Level
Input
VIO/2
All Inputs and Outputs
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