參數(shù)資料
型號: A28F200BR-B
廠商: Intel Corp.
英文描述: 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導塊閃速存儲器)
中文描述: 2兆位(256K × 8)開機區(qū)塊快閃記憶體(2兆位(128K的× 16)引導塊閃速存儲器)
文件頁數(shù): 27/36頁
文件大?。?/td> 440K
代理商: A28F200BR-B
E
A28F200BR
27
ADVANCE INFORMATION
Table 10. DC Characteristics: Automotive Temperature Operation
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Unit
Test Conditions
V
IH
Input High Voltage
2.0
V
CC
±
0.5V
V
V
OL
Output Low Voltage (TTL)
0.45
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
PP
=12V
V
CC
= V
CC
Min
I
OH
= -1.5 mA
V
CC
= V
CC
Min
I
OH
= -100 μA
V
OH
1
Output High Voltage (TTL)
2.4
V
V
OH
2
Output High Voltage (CMOS)
V
CC
-
.4V
V
V
PPLK
V
PP
Lock-Out Voltage
3
0.0
1.5
V
Complete Write
Protection
V
PPH
1
V
PP
(Program/ Erase
Operations)
V
PP
(Program/ Erase
Operations)
4.5
5.5
V
V
PP
at 5V
V
PPH
2
11.4
12.6
V
V
PP
at 12V
V
LKO
V
CC
Program/Erase
Lock Voltage
2.0
V
V
PP
= 12V
V
HH
RP# Unlock Voltage
11.4
12.6
V
Boot Block
Program/Erase
V
PP
= 12V
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at V
CC
= 5.0V, T = 25°C. These currents are valid for all
product versions (packages and speeds).
2. I
is specified with the device de-selected. If the devices is read while in erase suspend mode, current draw is the sum
of I
CCES
and I
CCR
.
3. Block erases and word/byte program operations are inhibited when V
PP
= V
PPLK
, and not guaranteed in the range between
V
PPH
1 and V
PPLK
.
4. Sampled, not 100% tested.
5. Automatic Power Savings (APS) reduces I
CCR
to less than 1 mA typical, in static operation.
6. CMOS Inputs are either V
CC
± 0.2V or GND ± 0.2V. TTL Inputs are either V
IL
or V
IH
.
相關PDF資料
PDF描述
A28F200BR-T 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導塊閃速存儲器)
A28F200BX-B 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導塊閃速存儲器)
A28F400BR-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導塊閃速存儲器)
A28F400BR-T 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導塊閃速存儲器)
A28F400BX-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導塊閃速存儲器)
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參數(shù)描述
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