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參數(shù)資料
| 型號(hào)： | A28F200BR-B |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 2兆位（256K × 8）開機(jī)區(qū)塊快閃記憶體（2兆位（128K的× 16）引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 18/36頁(yè) |
| 文件大?。?/td> | 440K |
| 代理商： | A28F200BR-B |
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A28F200BR
E
18
ADVANCE INFORMATION
SR.7 = 1
NO
YES
Start
Write 40H,
Word/Byte Address
Write Word/Byte
Data/Address
Full Status
Check if Desired
Word/Byte Program
Complete
FULL STATUS CHECK PROCEDURE
1
0
Read Status Register
Data (See Above)
1
0
Read
Status Register
V
PP
Range Error
Bus
Operation
Standby
Standby
Check SR.3
1 = V
PP
Low Detect
SR.3 MUST be cleared, if set during a program attempt,
before further attempts are allowed by the Write State Machine.
SR.4 is only cleared by the Clear Status Register command,
in cases where multiple bytes are programmed before full
status is checked.
If error is detected, clear the Status Register before attempting
retry or other error recovery.
Bus
Operation
Command
Comments
Write
Write
Setup
Program
Data = Data to Program
Addr = Location to Program
Read
Data = 40H
Addr = Word/Byte to Program
Check SR.7
1 = WSM Ready
0 = WSM Busy
Repeat for subsequent word/byte program operations.
SR Full Status Check can be done after each word/byte program,
or after a sequence of word/byte programs.
Write FFH after the last program operation to reset device to
read array mode.
Standby
SR.3=
SR.4 =
Word/Byte Program
Error
Word/Byte Program
Successful
Check SR.4
1 = Word/Byte Program Error
Program
Status Register Data
Toggle CE# or OE#
to Update SRD.
Command
Comments
0542_04
Figure 4. Automated Word/Byte Programming Flowchart
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A28F200BR-T | 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F200BX-B | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F200BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BR-T/B |
| A28F200BR-TB | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
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