參數(shù)資料
型號(hào)： A28F200BR-B
廠商： Intel Corp.
英文描述： 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器)
中文描述： 2兆位（256K × 8）開(kāi)機(jī)區(qū)塊快閃記憶體（2兆位（128K的× 16）引導(dǎo)塊閃速存儲(chǔ)器）
文件頁(yè)數(shù)： 17/36頁(yè)
文件大?。?/td> 440K
代理商： A28F200BR-B
When programming is complete, the status bits,
which indicate whether the program operation was
successful, should be checked. If bit 3 is set to a
“1,” then V
PP
was not within acceptable limits, and
the WSM did not execute the programming
sequence. If the program operation fails, Bit 4 of the
Status Register will be set within 3.3 ms as
determined by the timeout of the WSM.
A28F200BR
17
ADVANCE INFORMATION
The Status Register should be cleared before
attempting the next operation. Any CUI instruction
can follow after programming is completed;
however, reads from the Memory Array, Status
Register,
or
Intelligent
accomplished until the CUI is given the Read Array
command.
Identifier
cannot
be
3.3.4
ERASE MODE
Erasure of a single block is initiated by writing the
Erase Setup and Erase Confirm commands to the
CUI, along with the addresses identifying the block
to be erased. These addresses are latched
internally when the Erase Confirm command is
issued. Block erasure results in all bits within the
block being set to “1.”
The WSM will execute a sequence of internally
timed events to:
1.
2.
Program all bits within the block to “0.”
Verify that all bits within the block are
sufficiently programmed to “0.”
Erase all bits within the block.
Verify that all bits within the block are
sufficiently erased.
3.
4.
While the erase sequence is executing, bit 7 of the
Status Register is a “0.”
When the Status Register indicates that erasure is
complete, the status bits, which indicate whether
the erase operation was successful, should be
checked. If the erase operation was unsuccessful,
bit 5 of the Status Register will be set to a “1,”
indicating an Erase Failure. If V
PP
was not within
acceptable limits after the Erase Confirm command
is issued, the WSM will not execute an erase
sequence; instead, bit 5 of the Status Register is
set to a “1” to indicate an Erase Failure, and bit 3 is
set to a “1” to identify that V
PP
supply voltage was
not within acceptable limits.
The Status Register should be cleared before
attempting the next operation. Any CUI instruction
can follow after erasure is completed; however,
reads from the Memory Array, Status Register, or
Intelligent Identifier cannot be accomplished until
the CUI is given the Read Array command.
3.3.4.1
Suspending and Resuming Erase
Since an erase operation requires on the order of
seconds to complete, an Erase Suspend command
is provided to allow erase-sequence interruption in
order to read data from another block of the
memory. Once the erase sequence is started,
writing the Erase Suspend command to the CUI
requests that the WSM pause the erase sequence
at a pre-determined point in the erase algorithm.
The Status Register must then be read to determine
if the erase operation has been suspended.
At this point, a Read Array command can be written
to the CUI in order to read data from blocks other
than that which is being suspended. The only other
valid command at this time is the Erase Resume
command or Read Status Register command.
During erase suspend mode, the chip can go into a
pseudo-standby mode by taking CE# to V
IH
, which
reduces active current draw.
To resume the erase operation, the chip must be
enabled by taking CE# to V
IL
, then issuing the
Erase Resume command. When the Erase Resume
command is given, the WSM will continue with the
erase sequence and complete erasing the block. As
with the end of a standard erase operation, the
Status Register must be read, cleared, and the next
instruction issued in order to continue.
相關(guān)PDF資料
PDF描述
A28F200BR-T 2-MBIT (128K x 16) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器)
A28F200BX-B 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器)
A28F400BR-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器)
A28F400BR-T 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲(chǔ)器)
A28F400BX-B 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A28F200BR-T 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2-MBIT (128K X 16. 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
A28F200BR-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BR-T/B
A28F200BR-TB 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K X 16, 256K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
A28F200BX-B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
A28F200BX-T 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
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