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參數(shù)資料
| 型號： | A28F400BX-B |
| 廠商： | Intel Corp. |
| 英文描述： | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導塊閃速存儲器) |
| 中文描述： | 4兆位（為512k × 8）開機區(qū)塊快閃記憶體（4兆位（為512k × 8）引導塊閃速存儲器） |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 411K |
| 代理商： | A28F400BX-B |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290501-003
A28F400BX-T/B
4-MBIT (256K x16, 512K x8) BOOT BLOCK FLASH
MEMORY FAMILY
Automotive
Y
x8/x16 Input/Output Architecture
D A28F400BX-T, A28F400BX-B
D For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
Optimized High Density Blocked
Architecture
D One 16 KB Protected Boot Block
D Two 8 KB Parameter Blocks
D One 96 KB Main Block
D Three 128 KB Main Blocks
D Top or Bottom Boot Locations
Y
Extended Cycling Capability
D 1,000 Block Erase Cycles
Y
Automated Word/Byte Write and Block
Erase
D Command User Interface
D Status Register
D Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
D 1 mA Typical I
CC
Active Current in
Static Operation
Y
Very High-Performance Read
D 90 ns Maximum Access Time
D 45 ns Maximum Output Enable Time
Y
Low Power Consumption
D 25 mA Typical Active Read Current
Y
Deep Power-Down/Reset Input
D Acts as Reset for Boot Operations
Y
Automotive Temperature Operation
D
b
40
§
C to
a
125
§
C
Y
Write Protection for Boot Block
Y
Hardware Data Protection Feature
D Erase/Write Lockout During Power
Transitions
Y
Industry Standard Surface Mount
Packaging
D JEDEC ROM Compatible
44-Lead PSOP
Y
12V Word/Byte Write and Block Erase
D V
PP
e
12V
g
5% Standard
Y
ETOX
TM
III Flash Technology
D 5V Read
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F400BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F400BX-T/B |
| A28F5501S | 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
| A28F5502 | 制造商:General Electric Company 功能描述:Film Capacitor |
| A28F5502S | 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF 1KV 10% CASE 制造商:GE 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE 制造商:General Electric Company 功能描述:CAPACITOR PP FILM 0.5UF, 1KV, 10%, CASE; Capacitance:0.5F; Capacitance Tolerance: 10%; Capacitor Dielectric Type:Polypropylene (PP); Voltage Rating:1000V; Life Time @ Temperature:40000 hours @ 70C; Capacitor Case Style:CAN 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR |
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