參數(shù)資料
型號: A28F400BX-B
廠商: Intel Corp.
英文描述: 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲器)
中文描述: 4兆位(為512k × 8)開機(jī)區(qū)塊快閃記憶體(4兆位(為512k × 8)引導(dǎo)塊閃速存儲器)
文件頁數(shù): 17/34頁
文件大小: 411K
代理商: A28F400BX-B
A28F400BX-T/B
During Erase Suspend mode, the chip can go into a
pseudo-standby mode by taking CE
Y
to V
IH
and the
active current is now a maximum of 10 mA. If the
chip is enabled while in this mode by taking CE
Y
to
V
IL
, the Erase Resume command can be issued to
resume the erase operation.
Upon completion of reads from any block other than
the block being erased, the Erase Resume com-
mand must be issued. When the Erase Resume
command is given, the WSM will continue with the
erase sequence and complete erasing the block. As
with the end of erase, the status register must be
read, cleared, and the next instruction issued in or-
der to continue.
3.3.6 EXTENDED CYCLING
Intel has designed extended cycling capability into
its ETOX III flash memory technology. The 4-Mbit
boot block flash family is designed for 1,000 pro-
gram/erase cycles on each of the seven blocks. The
combination of low electric fields, clean oxide pro-
cessing and minimized oxide area per memory cell
subjected to the tunneling electric field, results in
very high cycling capability.
17
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
A28F400BX-T 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:4-MBIT 256K x16, 512K x8 BOOT BLOCK FLASH MEMORY FAMILY
A28F400BX-T/B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F400BX-T/B
A28F5501S 制造商:General Electric Company 功能描述:OIL FILLED CAPACITOR
A28F5502 制造商:General Electric Company 功能描述:Film Capacitor
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