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參數(shù)資料
| 型號(hào)： | A28F200BX-B |
| 廠商： | Intel Corp. |
| 英文描述： | 2-MBIT (256K x 8) Boot Block Flash Memory(2兆位 (128K x 16) 引導(dǎo)塊閃速存儲(chǔ)器) |
| 中文描述： | 2兆位（256K × 8）開機(jī)區(qū)塊快閃記憶體（2兆位（128K的× 16）引導(dǎo)塊閃速存儲(chǔ)器） |
| 文件頁(yè)數(shù)： | 1/33頁(yè) |
| 文件大小： | 411K |
| 代理商： | A28F200BX-B |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290500-003
A28F200BX-T/B
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK
FLASH MEMORY FAMILY
Automotive
Y
x8/x16 Input/Output Architecture
D A28F200BX-T, A28F200BX-B
D For High Performance and High
Integration 16-bit and 32-bit CPUs
Y
Optimized High Density Blocked
Architecture
D One 16 KB Protected Boot Block
D Two 8 KB Parameter Blocks
D One 96 KB Main Block
D One 128 KB Main Block
D Top or Bottom Boot Locations
Y
Extended Cycling Capability
D 1,000 Block Erase Cycles
Y
Automated Word/Byte Write and
Block Erase
D Command User Interface
D Status Register
D Erase Suspend Capability
Y
SRAM-Compatible Write Interface
Y
Automatic Power Savings Feature
D 1 mA Typical I
CC
Active Current in
Static Operation
Y
Hardware Data Protection Feature
D Erase/Write Lockout during Power
Transitions
Y
Very High-Performance Read
D 90 ns Maximum Access Time
D 45 ns Maximum Output Enable Time
Y
Low Power Consumption
D 25 mA Typical Active Read Current
Y
Deep Power-Down/Reset Input
D Acts as Reset for Boot Operations
Y
Automotive Temperature Operation
D
b
40
§
C to
a
125
§
C
Y
Write Protection for Boot Block
Y
Industry Standard Surface Mount
Packaging
D JEDEC ROM Compatible
44-Lead PSOP
Y
12V Word/Byte Write and Block Erase
D V
PP
e
12V
g
5% Standard
Y
ETOX
TM
III Flash Technology
D 5V Read
Y
Independent Software Vendor Support
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| A28F400BR-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BR-T | 4-MBIT (256K x16) Boot Block Flash Memory(4兆位 (256K x16)引導(dǎo)塊閃速存儲(chǔ)器) |
| A28F400BX-B | 4-MBIT (512K x8) Boot Block Flash Memory(4兆位(512K x8) 引導(dǎo)塊閃速存儲(chǔ)器) |
| A6FLR10MS02 | FAST RECOVERY DIODES |
| A6FLR20MS02 | CAP 220PF 200V 200V X7R RAD.20 .20X.20 BULK R-MIL-PRF-39014 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| A28F200BX-T | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY |
| A28F200BX-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F200BX-T/B |
| A28F400BR-B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BR-T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4-MBIT (256K X 16. 512K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| A28F400BR-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:A28F400BR-T/B |
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