參數(shù)資料
型號： A160CB15VD
廠商： Advanced Micro Devices, Inc.
英文描述： 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述： 16兆位（2米× 8位/ 1個M x 16位），1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù)： 5/52頁
文件大小： 614K
代理商： A160CB15VD
January23,2007 21635C5
Am29SL160C
3
D A T A S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Special Handling Instructions for FBGA Packages ..................6
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29SL160C Device Bus Operations ...............................9
Word/Byte Configuration ..........................................................9
Requirements for Reading Array Data .....................................9
Writing Commands/Command Sequences ............................10
Accelerated Program Operation .............................................10
Program and Erase Operation Status ....................................10
Standby Mode ........................................................................10
Automatic Sleep Mode ...........................................................10
RESET#: Hardware Reset Pin ...............................................10
Output Disable Mode ..............................................................11
Table 2. Am29SL160CT Top Boot Sector Architecture ..................12
Table 3. Am29SL160CB Bottom Boot Sector Architecture .............13
Autoselect Mode .....................................................................14
Table 4. Am29SL160C Autoselect Codes (High Voltage Method) ..14
Sector/Sector Block Protection and Unprotection ..................15
Table 5. Top Boot Sector/Sector Block Addresses
forProtection/Unprotection .............................................................15
Table 6. Bottom Boot Sector/Sector Block
Addresses forProtection/Unprotection ...........................................15
Write Protect (WP#) ................................................................16
Temporary Sector Unprotect ..................................................16
Figure 1. In-System Sector Protect/Unprotect Algorithms.............. 17
Figure 2. Temporary Sector Unprotect Operation........................... 18
Secured Silicon (SecSi) Sector Flash Memory Region ..........18
Table 7. SecSi Sector Addresses ...................................................18
Hardware Data Protection ......................................................18
Common Flash Memory Interface (CFI). . . . . . . 19
Table 8. CFI Query Identification String ..........................................19
Table 9. System Interface String .....................................................20
Table 10. Device Geometry Definition ............................................20
Table 11. Primary Vendor-Specific Extended Query ......................21
Command Definitions . . . . . . . . . . . . . . . . . . . . . 21
Reading Array Data ................................................................21
Reset Command .....................................................................21
Autoselect Command Sequence ............................................22
Enter SecSi Sector/Exit SecSi Sector Command Sequence ..22
Word/Byte Program Command Sequence .............................22
Figure 3. Program Operation.......................................................... 23
Chip Erase Command Sequence ...........................................24
Sector Erase Command Sequence ........................................24
Erase Suspend/Erase Resume Commands ...........................24
Figure 4. Erase Operation............................................................... 25
Command Definitions .............................................................26
Table 12. Am29SL160C Command Definitions ..............................26
Write Operation Status . . . . . . . . . . . . . . . . . . . . 27
DQ7: Data# Polling .................................................................27
Figure 5. Data# Polling Algorithm.................................................. 27
RY/BY#: Ready/Busy# ............................................................28
DQ6: Toggle Bit I ....................................................................28
DQ2: Toggle Bit II ...................................................................28
Reading Toggle Bits DQ6/DQ2 ...............................................28
DQ5: Exceeded Timing Limits ................................................29
DQ3: Sector Erase Timer .......................................................29
Figure 6. Toggle Bit Algorithm........................................................ 29
Table 13. Write Operation Status ...................................................30
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 31
Figure 7. Maximum Negative OvershootWaveform...................... 31
Figure 8. Maximum Positive OvershootWaveform........................ 31
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 31
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 32
Figure 9. I
CC1
Current vs. Time (Showing Active and Automatic
SleepCurrents).............................................................................. 33
Figure 10. Typical I
CC1
vs. Frequency............................................ 33
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Figure 11. Test Setup..................................................................... 34
Table 14. Test Specifications .........................................................34
Figure 12. Input Waveforms and Measurement Levels................. 34
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 35
Read Operations ....................................................................35
Figure 13. Read Operations Timings............................................. 35
Hardware Reset (RESET#) ....................................................36
Figure 14. RESET# Timings.......................................................... 36
Word/Byte Configuration (BYTE#) ........................................37
Figure 15. BYTE# Timings for Read Operations............................ 37
Figure 16. BYTE# Timings for Write Operations............................ 37
Erase/Program Operations .....................................................38
Figure 17. Program Operation Timings.......................................... 39
Figure 18. Chip/Sector Erase Operation Timings.......................... 40
Figure 19. Data# Polling Timings (During Embedded Algorithms). 41
Figure 20. Toggle Bit Timings (During Embedded Algorithms)...... 41
Figure 21. DQ2 vs. DQ6................................................................. 42
Figure 22. Temporary Sector Unprotect Timing Diagram.............. 42
Figure 23. Accelerated Program Timing Diagram.......................... 43
Figure 24. Sector Protect/Unprotect Timing Diagram.................... 43
Figure 25. Alternate CE# Controlled Write Operation Timings...... 45
Erase And Programming Performance . . . . . . . 46
Latchup Characteristics. . . . . . . . . . . . . . . . . . . . 46
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . . 46
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
Physical Dimensions* . . . . . . . . . . . . . . . . . . . . . 47
TS 048—48-Pin Standard TSOP ............................................47
FBC048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
8 x 9 mm package ..................................................................48
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 49
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A160CB15VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
A160CB15VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB15VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VD 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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