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參數(shù)資料
| 型號： | A160CB15VD |
| 廠商： | Advanced Micro Devices, Inc. |
| 英文描述： | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| 中文描述： | 16兆位（2米× 8位/ 1個M x 16位），1.8伏的CMOS只超低電壓快閃記憶體 |
| 文件頁數(shù)： | 25/52頁 |
| 文件大小： | 614K |
| 代理商： | A160CB15VD |
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January23,2007 21635C5
Am29SL160C
23
D A T A S H E E T
During the unlock bypass mode, only the Unlock
Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset
command sequence. The first cycle must contain the
data 90h; the second cycle the data 00h. Addresses
are don’t cares. The device then returns to reading
array data.
The device offers accelerated program operations
through the WP#/ACC pin. This function is intended
only to speed in-system programming of the device
during system production. When the system asserts
V
HH
on the WP#/ACC pin, the device automatically
enters the Unlock Bypass mode. The system may then
write the two-cycle Unlock Bypass program command
sequence. The device uses the higher voltage on the
WP#/ACC pin to accelerate the operation. Note that the
WP#/ACC pin must not be at V
HH
for any operation
other than accelerated programming, or device
damage may result. In addition, the WP#/ACC pin must
not be left floating or unconnected; inconsistent
behavior of the device may result.
Figure 3
illustrates the algorithm for the program oper-
ation. See
“Erase/Program Operations” on page 38
for
parameters, and
Figure 17, on page 39
for timing
diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data
No
Yes
Last Address
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
Note:
See
Table 12, on page 26
for program command
sequence.
Figure 3.
Program Operation
相關PDF資料 |
PDF描述 |
|---|---|
| A160CB15VF | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VC | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VD | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VF | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VI | 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| A160CB15VF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CB15VI | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VC | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VD | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
| A160CT10VF | 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory |
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