參數(shù)資料
型號: A160CB15VD
廠商: Advanced Micro Devices, Inc.
英文描述: 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
中文描述: 16兆位(2米× 8位/ 1個M x 16位),1.8伏的CMOS只超低電壓快閃記憶體
文件頁數(shù): 3/52頁
文件大?。?/td> 614K
代理商: A160CB15VD
DATA SHEET
This Data Sheet states AMD’s current specifications regarding the Products described herein. This Data Sheet may
be revised by subsequent versions or modifications due to changes in technical specifications.
Publication#
21635
Issue Date:
January 23, 2007
Rev:
C
Amendment/
5
Am29SL160C
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 1.8 Volt-only Super Low Voltage Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Secured Silicon (SecSi) Sector: 256-byte sector
Factory locked and identifiable:
16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable:
Customer may program own
custom data. Once locked, data cannot be changed
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
Package options
— 48-ball FBGA
— 48-pin TSOP
Top or bottom boot block
Manufactured on 0.32 μm process technology
Compatible with JEDEC standards
— Pinout and software compatible with single-power-
supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 100 ns
— Program time: 8 μs/word typical using Accelerate
Ultra low power consumption (typical values)
— 1 mA active read current at 1 MHz
— 5 mA active read current at 5 MHz
— 1 μA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 Year data retention at 125
°
C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow programming in
same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to reading array data
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either in-
system or using programming equipment, to prevent
any program or erase operation within that sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
相關PDF資料
PDF描述
A160CB15VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VC 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VD 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VF 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
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相關代理商/技術參數(shù)
參數(shù)描述
A160CB15VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CB15VI 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VC 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VD 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory
A160CT10VF 制造商:AMD 制造商全稱:Advanced Micro Devices 功能描述:16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory