參數(shù)資料
型號: 933939780112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 3/18頁
文件大?。?/td> 138K
代理商: 933939780112
September 1992
11
Philips Semiconductors
Product specication
HF/VHF power MOS transistor
BLF175
Fig.17 Third order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
204060
0
20
60
40
MGP078
d3
(dB)
PL (W) PEP
Fig.18 Fifth order intermodulation distortion as a
function of load power, typical values.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 ;f1 = 28.000 MHz; f2 = 28.001 MHz.
handbook, halfpage
0
204060
0
20
60
40
MGP079
d5
(dB)
PL (W) PEP
Fig.19 Test circuit for class-AB operation.
f = 28 MHz.
handbook, full pagewidth
,,
C9
C12
R3
L6
+VD
50
output
C11
C10
C8
C7
L5
C6
L3
D.U.T.
L2
C5
R1
R2
+VG
C4
L1
C3
C2
C1
50
output
MGP080
L4
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PDF描述
0569960000 24 A, BARRIER STRIP TERMINAL BLOCK, 1 ROW, 1 DECK
933943940115 400 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950135 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933943950115 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243
933946340215 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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