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參數(shù)資料
| 型號(hào)： | 933946340215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | 933946340215 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
BSS123
Logic level FET
FEATURES
SYMBOL
QUICK REFERENCE DATA
’Trench’ technology
Extremely fast switching
V
DSS = 100 V
Logic level compatible
Subminiature surface mounting
I
D = 150 mA
package
R
DS(ON) ≤ 6 (VGS = 10 V)
GENERAL DESCRIPTION
PINNING
SOT23
N-channel
enhancement
mode
PIN
DESCRIPTION
field-effect transistor in a plastic
envelope
using
’trench’
1
gate
technology.
2
source
Applications:-
Relay driver
3
drain
High-speed line driver
Telephone ringer
The BSS123 is supplied in the
SOT23
subminiature
surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j = 25 C to 150C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 150C; RGS = 20 k
-
100
V
GS
Gate-source voltage
-
± 20
V
I
D
Continuous drain current
T
a = 25 C
-
150
mA
I
DM
Pulsed drain current
T
a = 25 C
-
600
mA
P
D
Total power dissipation
T
a = 25 C
-
0.25
W
T
j, Tstg
Operating junction and
- 55
150
C
storage temperature
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction
surface mounted on FR4 board
500
-
K/W
to ambient
d
g
s
1
2
3
Top view
August 2000
1
Rev 1.000
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