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參數(shù)資料
| 型號： | 933946340215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 933946340215 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
BSS123
Logic level FET
ELECTRICAL CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 10 A
100
130
-
V
voltage
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
2
2.8
V
R
DS(ON)
Drain-source on-state
V
GS = 10 V; ID = 120 mA
-
3.5
6
resistance
g
fs
Forward transconductance
V
DS = 25 V; ID = 120 mA
-
350
-
mS
I
DSS
Zero gate voltage drain
V
DS = 60 V; VGS = 0 V
-
10
100
nA
current
I
GSS
Gate source leakage current V
GS = ±20 V; VDS = 0 V
-
10
100
nA
t
on
Turn-on time
V
DD = 50 V; RD = 250 ; VGS = 10 V;
-
3
10
ns
R
G = 50 ; Resistive load
t
off
Turn-off time
-
12
20
ns
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
23
40
pF
C
oss
Output capacitance
-
6
25
pF
C
rss
Feedback capacitance
-
4
10
pF
August 2000
2
Rev 1.000
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